Dual Channel MOSFET Bruckewell MSH30C16D Featuring High Cell Density and Operation for Power Management Systems
Product Overview
The MSH30C16D is a high-performance N-channel and P-channel MOSFET designed with extreme high cell density. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. It is suitable for 4.5V gate drive applications and provides excellent CdV/dt effect decline.
Product Attributes
- Brand: Bruckewell Technology Corporation
- Product Line: MSH30C16D
- Channel Type: N-Channel & P-Channel
- RoHS Compliant: Yes
- Green Device Available: Yes
- Package Type: PDFN 5X6 Dual
- Packing: 3,000/Reel
Technical Specifications
| Parameter | N-ch (Typical) | P-ch (Typical) | Units | Notes |
|---|---|---|---|---|
| Drain-Source Voltage (VDS) | 30 | -30 | V | |
| Gate-Source Voltage (VGS) | 20 | V | ||
| Continuous Drain Current (ID) @ TC =25C | 33 | -31 | A | 1 |
| Continuous Drain Current (ID) @ TC =70C | 21 | -20 | A | 1 |
| Pulsed Drain Current (IDM) @ TC =25C | 132 | -124 | A | 2 |
| Single Pulse Avalanche Current (IAS) @ L =0.1mH | 22 | -38 | A | 3 |
| Single Pulse Avalanche Energy (EAS) @ L =0.1mH | 24 | 72 | mJ | 3, 5 |
| Power Dissipation (PD) @ TA =25C | 2.5 | W | 3 | |
| Operating Junction and Storage Temperature (TJ/TSTG) | -55 to +150 | C | ||
| Maximum Junction-to-Ambient Thermal Resistance (RJA) | 55 | C/W | 1 | |
| Maximum Junction-to-Case Thermal Resistance (RJC) | 5 | C/W | 1 | |
| Gate Threshold Voltage (VGS(th)) @ VDS =VGS, ID =250A (N-ch) / -250A (P-ch) | 1.0 - 2.5 | -1.0 - -2.5 | V | |
| Drain-Source Breakdown Voltage (BVDSS) @ VGS =0V, ID =250A (N-ch) / -250A (P-ch) | 30 | -30 | V | |
| Static Drain-Source On-Resistance (RDS(on)) @ VGS =10V, ID =9A (N-ch) / VGS =-10V, ID =-8A (P-ch) | 12 | 17 | m | 2 |
| Static Drain-Source On-Resistance (RDS(on)) @ VGS =4.5V, ID =5A (N-ch) / VGS =-4.5V, ID =-4A (P-ch) | 16 | 26 | m | 2 |
| Total Gate Charge (Qg) @ VDS =15V, ID =9A (N-ch) / VDS =-15V, ID =-8A (P-ch), VGS =4.5V (N-ch) / -4.5V (P-ch) | 9.8 | 22 | nC | 2 |
| Input Capacitance (CISS) | 940 | 2213 | pF | |
| Output Capacitance (COSS) | 132 | 311 | pF | |
| Reverse Transfer Capacitance (CRSS) | 108 | 235 | pF | |
Typical Applications: DC Fan, Motor Drive Applications, Networking, Half / Full Bridge Topology
Notes:
1. Tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2. Tested by pulsed, pulse width 300s, duty cycle 2%.
3. EAS data shows maximum rating. Test condition: N-ch VDD=25V, VGS=10V, L=0.1mH, IAS=22A; P-ch VDD=-25V, VGS=-10V, L=0.1mH, IAS=-38A.
4. Power dissipation is limited by 150 junction temperature.
5. Min. value is 100% EAS tested guarantee.
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