SOT23 Plastic Package Transistor CBI MMBTSA1037 PNP Silicon Epitaxial Planar for Various Electronics

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Price: Negotiable

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Delivery Time: Negotiable

Product Description

Product Overview

This PNP Silicon Epitaxial Planar Transistor is designed for various electronic applications. It is subdivided into three groups (Q, R, and S) based on its DC current gain, offering flexibility for different performance requirements. The transistor is housed in a compact SOT-23 plastic package. Special requests for different pin configurations can be accommodated.

Product Attributes

Package Type: SOT-23 Plastic Package
Transistor Type: PNP Silicon Epitaxial Planar
Grouping by DC Current Gain: Q, R, S
Customization: Available in different pin configurations upon special request
Origin: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

Parameter	Symbol	Value	Unit	Notes
Absolute Maximum Ratings (Ta = 25 C)
Collector Base Voltage	-VCBO	60	V
Collector Current	-IC	150	mA
Power Dissipation	Ptot	200	mW
Junction Temperature	Tj	150	C
Storage Temperature Range	TS	-55 to +150	C
Characteristics at Tamb = 25 C
DC Current Gain at -VCE=6V, -IC=1mA	hFE (Group Q)	120 - 180	-
	hFE (Group R)	180 - 270	-
	hFE (Group S)	270 - 560	-
Collector Cutoff Current at -VCB=60V	-ICBO	-	0.1 A	Max
Emitter Cutoff Current at -VEB=6V	-IEBO	-	0.1 A	Max
Collector Saturation Voltage at -IC=50mA, -IB=5mA	-VCE(sat)	-	0.5 V	Max
Collector Base Breakdown Voltage at -IC=50A	-V(BR)CBO	60	V	Min
Collector Emitter Breakdown Voltage at -IC=1mA	-V(BR)CEO	50	V	Min
Emitter Base Breakdown Voltage at -IE=50A	-V(BR)EBO	6	V	Min
Transition Frequency at -VCE=12V, -IC=2mA, f=30MHz	fT	120	MHz	Min