Compact dual PNP transistor solution CBI BC856DW ideal for space constrained electronic applications

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

This product features two PNP transistors integrated into a single package, offering a compact solution that reduces component count and board space. The dual transistor design ensures no mutual interference between the individual transistors, providing reliable performance. It is suitable for applications requiring two complementary PNP transistors in a space-constrained environment.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.
Type: Dual Transistor (PNP+PNP)
Marking: 5Ft 600
Origin: China

Technical Specifications

Parameter	Condition	Value	Unit
Collector-Base Voltage (V(BR)CBO)	IC=-10 A, IE=0	-80	V
Collector-Emitter Voltage (V(BR)CEO)	IC=-10mA, IB=0	-65	V
Emitter-Base Voltage (V(BR)EBO)	IE=-10 A, IC=0	-5	V
Collector Cut-off Current (ICBO)	VCB=-30V, IE=0	-15	nA
Emitter Cut-off Current (IEBO)	VEB=-5V, IC=0	-100	nA
DC Current Gain (hFE)	VCE=-5V, IC=-2mA	110
DC Current Gain (hFE)	IC=-10mA, IB=-0.5mA	-0.1
Collector-Emitter Saturation Voltage (VCE(sat))	IC=-100mA, IB=-5mA	-0.3	V
Base-Emitter Saturation Voltage (VBE(sat))	IC=-10mA, IB=-0.5mA	0.7	V
Output Capacitance (Cobo)	VCB =-10V, f= 1MHz, IE = 0	2.5	pF
Transition Frequency (fT)	VCE =-5V, IC =-10mA, f= 100MHz	100	MHz
Collector Current (Continuous)		-0.1	A
Collector Power Dissipation		0.2	W
Thermal Resistance (Junction to Ambient)		625	C/W
Junction Temperature		150	C
Storage Temperature		-55 to 150	C