CBI BC80725W SOT323 Plastic Encapsulated PNP Transistor with Collector Emitter Breakdown Voltage 45V

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Price: Negotiable

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Product Description

Product Overview

The SOT-323 Plastic-Encapsulated Transistor is an epitaxial planar die transistor ideally suited for automatic insertion. It offers complementary functionality to the BC817W. Key electrical characteristics include a collector-emitter breakdown voltage of -45V and a DC current gain (hFE) ranging from 100 to 600 depending on the specific rank. This transistor is designed for various electronic applications requiring reliable PNP transistor performance.

Product Attributes

Package Type: SOT-323
Transistor Type: PNP
Construction: Epitaxial planar die
Complementary to: BC817W
Origin: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

Symbol	Parameter	Test Conditions	Min	Max	Unit
VCBO	Collector-base breakdown voltage	IC=-10A, IE=0		-50	V
VCEO	Collector-emitter breakdown voltage	IC=-10mA, IB =0		-45	V
VEBO	Emitter-base breakdown voltage	IE=-1A, IC=0		-5	V
ICBO	Collector cut-off current	VCB=-20 V, IE=0		-0.1	A
ICEO	Collector cut-off current	VCE=-20 V, IB=0		-0.2	A
IEBO	Emitter cut-off current	VEB=-5 V, IC=0		-0.1	A
hFE(1)	DC current gain	VCE=--1V, IC= -100mA	100	600
hFE(2)	DC current gain	VCE=-1V, IC= -500mA	40
VCE(sat)	Collector-emitter saturation voltage	IC=-500mA, IB=-50 mA		-0.7	V
VBE(on)	Base-emitter voltage	VCE= -1V, IC= -500mA		-1.2	V
fT	Transition frequency	VCE=-5 V, IC= -10mA		80	MHz
Cob	Collector output capacitance	VCB=-10V, f=1MHz		10	pF

hFE Classification

Rank	Range	Marking
BC807-16W	100-250	5A
BC807-25W	160-400	5B
BC807-40W	250-600	5C

Maximum Ratings

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	-50	V
VCEO	Collector-Emitter Voltage	-45	V
VEBO	Emitter-Base Voltage	-5	V
IC	Collector Current	-500	mA
PC	Collector Power Dissipation	200	mW
RJA	Thermal Resistance From Junction To Ambient	417	/W
Tj	Junction Temperature	150
Tstg	Storage Temperature	-55+150