Power Amplification and Switching Dual Transistor CBI MMDT2227DW with Epitaxial Planar Die Construction

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Product Description

Product Overview

This product is a plastic-encapsulated dual transistor, featuring one 2222A NPN and one 2907A PNP transistor in a single package. It is ideal for power amplification and switching applications. The device utilizes epitaxial planar die construction and is marked as K27 for the NPN type.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.
Package Type: SOT-363
Construction: Epitaxial planar die
Configuration: Dual Transistor (NPN + PNP)

Technical Specifications

NPN 2222A Transistor

Parameter	Symbol	Test Conditions	Min	Max	Units
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
Collector-Base Voltage	VCBO			75	V
Collector-Emitter Voltage	VCEO			40	V
Emitter-Base Voltage	VEBO			6	V
Collector Current - Continuous	IC			600	mA
Collector Power Dissipation	PC			200	mW
Junction Temperature	TJ			150
Storage Temperature	Tstg		-55	150
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
Collector-base breakdown voltage	V(BR)CBO	IC= 10A, IE=0	75		V
Collector-emitter breakdown voltage	V(BR)CEO	IC= 10mA, IB=0	40		V
Emitter-base breakdown voltage	V(BR)EBO	IE=10A.IC=0		6	V
Collector cut-off current	ICBO	VCB= 60V, IE=0		10	nA
Collector cut-off current	ICEX	VCE= 60V,VEB(off)=3V		10	nA
Emitter cut-off current	IEBO	VEB= 3 V, IC=0		10	nA
DC current gain	hFE(1) *	VCE=10V, IC= 0.1mA	35
	hFE(2) *	VCE=10V, IC= 1mA	50
	hFE(3) *	VCE=10V, IC= 10mA	75
	hFE(4) *	VCE=10V, IC= 150mA	100	300
	hFE(5) *	VCE=10V, IC= 500mA	40
Collector-emitter saturation voltage	VCE(sat)1 *	IC=150mA, IB= 15mA		0.3	V
	VCE(sat)2 *	IC=500mA, IB= 50mA		1	V
Base-emitter saturation voltage	VBE(sat)1 *	IC=150mA, IB=15mA	0.6	1.2	V
Base-emitter saturation voltage	VBE(sat)2 *	IC=500mA, IB= 50mA		2	V
Transition frequency	fT	VCE=20V, IC= 20mA, f=100MHz		300	MHz
Output Capacitance	Cob	VCB=10V, IE=0,f=1MHz		8	pF
Input Capacitance	Cib	VEB=0.5V,IC= 0,f=1MHz		25	pF
Noise Figure	NF	VCE=10V, IC=100A, f=1KHz,Rs=1K		4	dB
Switching characteristics (VCC=30V, IC=150mA, VBE(off)=0.5V,IB1=15mA)
Delay time	td			10	ns
Rise time	tr			25	ns
Storage time	tS			225	ns
Fall time	tf			60	ns

PNP 2907A Transistor

Parameter	Symbol	Test Conditions	Min	Max	Units
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
Collector-Base Voltage	VCBO			-60	V
Collector-Emitter Voltage	VCEO			-60	V
Emitter-Base Voltage	VEBO			-5	V
Collector Current - Continuous	IC			-600	mA
Collector Power Dissipation	PC			200	mW
Junction Temperature	TJ			150
Storage Temperature	Tstg		-55	150
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
Collector-base breakdown voltage	V(BR)CBO	IC= -10A, IE=0	-60		V
Collector-emitter breakdown voltage	V(BR)CEO	IC= -10mA, IB=0	-60		V
Emitter-base breakdown voltage	V(BR)EBO	IE=-10A, IC=0		-5	V
Collector cut-off current	ICBO	VCB=-50V, IE=0		-10	nA
Collector cut-off current	ICEX	VCE=-30V,VEB(off)=-0.5V		-50	nA
Emitter cut-off current	IEBO	VEB=-3V, IC=0		-10	nA
DC current gain	hFE(1) *	VCE=-10V, IC= -0.1mA	75
	hFE(2) *	VCE=-10V, IC= -1mA	100
	hFE(3) *	VCE=-10V, IC=-10mA	100
	hFE(4) *	VCE=-10V, IC= -150mA	100	300
Collector-emitter saturation voltage	VCE(sat)1 *	IC=-150mA, IB=-15mA		-0.4	V
	VCE(sat)2 *	IC=-500mA, IB= -50mA		-1.6	V
Base-emitter saturation voltage	VBE(sat)1 *	IC=-150mA, IB=-15mA	-1.3		V
Base-emitter saturation voltage	VBE(sat)2 *	IC=-500mA, IB= -50mA		-2.6	V
Transition frequency	fT	VCE=-20V, IC= -50mA,f=100MHz		200	MHz
Output Capacitance	Cob	VCB=-10V, IE= 0,f=1MHz		8	pF
Input Capacitance	Cib	VEB=-2V, IC= 0,f=1MHz		30	pF
Switching characteristics (VCC=-30V,IC=-150mA, IB1=-15mA)
Delay time	td			10	ns
Rise time	tr			40	ns
Storage time	ts			225	ns
Fall time	tf			60	ns