Electronic NPN Transistor CBI SS8050W Complementary to SS8550W Suitable for Circuit Design

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Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The SS8050W is an NPN transistor designed as a complementary part to the SS8550W. It is suitable for various electronic applications requiring reliable transistor performance.

Product Attributes

MARKING: Y1
Complimentary to SS8550W

Technical Specifications

Parameter	Symbol	Test Conditions	MIN	TYP	MAX	Units
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Collector-Base Voltage	VCBO				40	V
Collector-Emitter Voltage	VCEO				25	V
Emitter-Base Voltage	VEBO				5	V
Collector Current -Continuous	IC				1.5	A
Collector Power Dissipation	PC				0.2	W
Junction Temperature	Tj				150
Storage Temperature	Tstg		-55		150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Collector-base breakdown voltage	V(BR)CBO	IC= 100A, IE=0	40			V
Collector-emitter breakdown voltage	V(BR)CEO	IC= 0.1mA, IB=0	25			V
Emitter-base breakdown voltage	V(BR)EBO	IE=100A, IC=0	5			V
Collector cut-off current	ICBO	VCB=40V, IE=0			0.1	A
Collector cut-off current	ICEO	VCB=20V, IE=0			0.1	A
Emitter cut-off current	IEBO	VEB= 5V, IC=0			0.1	A
DC current gain	hFE(1)	VCE=1V, IC= 100mA	120		400
DC current gain	hFE(2)	VCE=1V, IC= 800mA		40
Collector-emitter saturation voltage	VCE(sat)	IC=800mA, IB= 80mA			0.5	V
Base-emitter saturation voltage	VBE(sat)	IC=800mA, IB= 80mA			1.2	V
Transition frequency	fT	VCE=10V, IC= 50mA, f=30MHz		100		MHz

Package Information

Package	Pin 1	Pin 2	Pin 3
SOT-323	BASE	EMITTER	COLLECTOR

Package Outline Dimensions (SOT-323)

Symbol	Dimensions In Millimeters		Dimensions In Inches
	Min.	Max.	Min.	Max.
A	0.900	1.100	0.035	0.043
A1	0.000	0.100	0.000	0.004
A2	0.900	1.000	0.035	0.039
b	0.200	0.400	0.008	0.016
c	0.080	0.150	0.003	0.006
D	2.000	2.200	0.079	0.087
E	1.150	1.350	0.045	0.053
E1	2.150	2.450	0.085	0.096
e
e1	1.200	1.400	0.047	0.055
L
L1	0.260	0.460	0.010	0.018
	0	8	0	8
(REF.)	0.525		0.021
(TYP.)	0.650		0.026