PNP transistor CBI MMBT3906W with 150 degree junction temperature and 40 volt collector base voltage

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Product Description

Product Overview

The MMBT3906W is a PNP Silicon Epitaxial Planar Transistor designed for switching and amplifier applications. It offers reliable performance with specified characteristics for DC current gain, cutoff currents, and breakdown voltages.

Product Attributes

Marking Code: 3N

Technical Specifications

Parameter	Symbol	Value	Unit
Absolute Maximum Ratings (Ta = 25 C)
Collector Base Voltage	-VCBO	40	V
Collector Emitter Voltage	-VCEO	40	V
Emitter Base Voltage	-VEBO	5	V
Collector Current	-IC	200	mA
Total Power Dissipation	Ptot	200	mW
Junction Temperature	Tj	150	C
Storage Temperature Range	Tstg	-55 to +150	C
Characteristics at Ta = 25 C
DC Current Gain at -VCE = 1 V, -IC = 0.1 mA	hFE	60	-
DC Current Gain at -VCE = 1 V, -IC = 1 mA	hFE	80	-
DC Current Gain at -VCE = 1 V, -IC = 10 mA	hFE	100	-
DC Current Gain at -VCE = 1 V, -IC = 50 mA	hFE	60	-
DC Current Gain at -VCE = 1 V, -IC = 100 mA	hFE	30	-
Collector Emitter Cutoff Current at -VCE = 30 V	-ICES	-	50 nA
Emitter Base Cutoff Current at -VEB = 3 V	-IEBO	-	50 nA
Collector Base Breakdown Voltage at -IC = 10 A	-V(BR)CBO	40	V
Collector Emitter Breakdown Voltage at -IC = 1 mA	-V(BR)CEO	40	V
Emitter Base Breakdown Voltage at -IE = 10 A	-V(BR)EBO	5	V
Collector Emitter Saturation Voltage at -IC = 10 mA, -IB = 1 mA	-VCE(sat)	-	0.25 V
Collector Emitter Saturation Voltage at -IC = 50 mA, -IB = 5 mA	-VCE(sat)	-	0.4 V
Base Emitter Saturation Voltage at -IC = 10 mA, -IB = 1 mA	-VBE(sat)	0.65	V
Base Emitter Saturation Voltage at -IC = 50 mA, -IB = 5 mA	-VBE(sat)	0.85	V
Transition Frequency at -VCE = 20 V, IE = 10 mA, f = 100 MHz	fT	250	MHz
Collector Output Capacitance at -VCB = 10 V, f = 100 KHz	Cob	-	4.5 pF
Delay Time at -VCC = 3 V, -VBE(OFF) = 0.5 V, -IC = 10 mA, -IB1 = 1 mA	td	-	35 ns
Rise Time at -VCC = 3 V, -VBE(OFF) = 0.5 V, -IC = 10 mA, -IB1 = 1 mA	tr	-	35 ns
Storage Time at -VCC = 3 V, -IC = 10 mA, IB1 = -IB2 = -1 mA	tstg	-	225 ns
Fall Time at -VCC = 3 V, -IC = 10 mA, IB1 = -IB2 = -1 mA	tf	-	75 ns