High reliability PNP transistor CBI S8550 with 0.5A collector current and 0.2W power dissipation

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Product Description

Product Overview

The S8550T is a PNP bipolar junction transistor designed as a complementary part to the S8050T. It features a continuous collector current of 0.5A and a collector power dissipation of 0.2W. This transistor is suitable for applications requiring a continuous collector current of up to 0.5A and is marked with '2TY'.

Product Attributes

Type: PNP Transistor
Marking: 2TY
Complementary to: S8050T
Package: SOT-523

Technical Specifications

Symbol	Parameter	Test Conditions	Value	Units
MAXIMUM RATINGS (TA=25 unless otherwise noted)
VCBO	Collector-Base Voltage		-40	V
VCEO	Collector-Emitter Voltage		-25	V
VEBO	Emitter-Base Voltage		-5	V
IC	Collector Current -Continuous		-0.5	A
PC	Collector Power Dissipation		0.2	W
Tj	Junction Temperature		150
Tstg	Storage Temperature		-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
V(BR)CBO	Collector-base breakdown voltage	IC = -100A, IE=0	-40	V
V(BR)CEO	Collector-emitter breakdown voltage	IC =-1mA, IB=0	-25	V
V(BR)EBO	Emitter-base breakdown voltage	IE= -100A, IC=0	-5	V
ICBO	Collector cut-off current	VCB= -40V, IE=0	-0.1	A
ICEO	Collector cut-off current	VCE= -20V, IB=0	-0.1	A
IEBO	Emitter cut-off current	VEB= -3V, IC=0	-0.1	A
hFE(1)	DC current gain	VCE= -1V, IC= -50mA	120 - 400
hFE(2)	DC current gain	VCE= -1V, IC= -500mA	50
VCE(sat)	Collector-emitter saturation voltage	IC=-500mA, IB= -50mA	-0.6	V
VBE(sat)	Base-emitter saturation voltage	IC=-500mA, IB= -50mA	-1.2	V
fT	Transition frequency	VCE= -6V, IC= -20mA, f=30MHz	150	MHz
CLASSIFICATION OF hFE(1)
Rank	Range
L	120-200
H	200-350
J	300-400
Pin 1	BASE
Pin 2	EMITTER
Pin 3	COLLECTOR