Digital Transistor PNP CBI DTA143ZE Featuring Built in Bias Resistors for Reduced Parasitic Effects

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Product Description

Product Overview

This Digital Transistor (PNP) features built-in bias resistors, simplifying inverter circuit configuration by eliminating the need for external input resistors. The thin-film resistors offer complete isolation for negative biasing and minimize parasitic effects, allowing for easy device design focused solely on on/off conditions. Ideal for applications requiring simplified digital circuit implementation.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

Part Number	MARKING	Package	Packing Method	Pack Quantity
DTA143ZE	E13	SOT-523	Reel	3000pcs/Reel
DTA143ZUA	E13	SOT-323	Reel	3000pcs/Reel
DTA143ZKA	E13	SOT-23-3L	Reel	3000pcs/Reel
DTA143ZCA	E13	SOT-23	Reel	3000pcs/Reel

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
VCC	Supply Voltage				-50	V
VIN	Input Voltage		-30		+5	V
IO	Output Current				-100	mA
PD	Power Dissipation		150	200	200	200 mW
Tj	Junction Temperature				150
Tstg	Storage Temperature		-55		+150
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
VI(off)	Input voltage	VCC=-5V, IO=-100A	-0.5			V
VI(on)	Input voltage	VO=-0.3V, IO=-5mA	-1.3			V
VO(on)	Output voltage	IO/II=-5mA/-0.25mA			-0.3	V
II	Input current	VI=-5V		-1.8		mA
IO(off)	Output current	VCC=-50V, VI=0			-0.5	A
GI	DC current gain	VO=-5V, IO=-10mA	80
R1	Input resistance		3.29	4.7	6.11
R2/R1	Resistance ratio		8	10	12
fT	Transition frequency	VO=-10V, IO=-5mA, f=100MHz		250		MHz

Symbol	Parameter	Conditions	Value	Unit
CO	OUTPUT CAPACITANCE	Ta=25, VR= -3V, f=1MHz	30	pF
CO	OUTPUT CAPACITANCE	Ta=25, VR= -30V, f=1MHz	3	pF
GI	DC CURRENT GAIN	Ta=25, VO=-5V, IO=-10mA	80
GI	DC CURRENT GAIN	Ta=100, VO=-5V, IO=-10mA	30
VO(ON)	OUTPUT VOLTAGE	Ta=25, IO/II=20, IO=-5mA	-0.3	V
VO(ON)	OUTPUT VOLTAGE	Ta=100, IO/II=20, IO=-5mA	-0.3	V