Dual Transistor Component Including NPN and PNP Types CBI BC847PN Suitable for Electronic Applications

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Price: Negotiable

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Product Description

Product Overview

This product is a plastic-encapsulated dual transistor package containing two isolated NPN and PNP transistors. It is designed for various electronic applications requiring complementary transistor functions within a single component. The device features epitaxial die construction and is available in a SOT-363 package.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.
Package Type: SOT-363
Transistor Configuration: Dual Transistor (NPN + PNP)
Model Numbers: BC847W+BC857W (implied as the specific components within the dual package)

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Max	Unit
TR1 (NPN Transistor)
Collector-base breakdown voltage	V(BR)CBO	IC=10A, IE=0		50	V
Collector-emitter breakdown voltage	V(BR)CEO	IC=10mA, IB=0		45	V
Emitter-base breakdown voltage	V(BR)EBO	IE=1A, IC=0		6	V
Collector cut-off current	ICBO	VCB=30V, IE=0		15	nA
Emitter cut-off current	IEBO	VEB=5V, IC=0		15	nA
DC current gain	hFE	VCE=5V, IC=2mA	200	450
Collector-emitter saturation voltage	VCE(sat)	IC=10mA, IB=0.5mA		0.25	V
Collector-emitter saturation voltage	VCE(sat)	IC=100mA, IB=5mA		0.6	V
Base-emitter saturation voltage	VBE(sat)	IC=10mA, IB=0.5mA		0.7	V
Base-emitter saturation voltage	VBE(sat)	IC=100mA, IB=5mA		0.9	V
Base-emitter voltage	VBE(on)	VCE=5V, IC=2mA	0.58	0.7	V
Base-emitter voltage	VBE(on)	VCE=5V, IC=10mA	0.72		V
Collector output capacitance	Cob	VCB=10V, IE=0, f=1MHz		6.0	pF
Transition frequency	fT	VCE=5V, IC=10mA, f=100MHz		100	MHz
Noise figure	NF	VCE=5V, Ic=0.2mA, f=1kHz, Rg=2K, f=200Hz		10	dB
Maximum Ratings for TR1
Collector-Base Voltage	VCBO			50	V
Collector-Emitter Voltage	VCEO			45	V
Emitter-Base Voltage	VEBO			6	V
Collector Current Continuous	IC			0.1	A
Collector Power Dissipation	PC			200	mW
Junction Temperature	TJ			150
Storage Temperature	Tstg		-55	150
TR2 (PNP Transistor)
Collector-base breakdown voltage	V(BR)CBO	IC=-10A, IE=0		-50	V
Collector-emitter breakdown voltage	V(BR)CEO	IC=-10mA, IB=0		-45	V
Emitter-base breakdown voltage	V(BR)EBO	IE=-1A, IC=0		-5	V
Collector cut-off current	ICBO	VCB=-30V, IE=0		-15	nA
Emitter cut-off current	IEBO	VEB=-5V, IC=0		-15	nA
DC current gain	hFE1	VCE=-5V, IC=-2mA	220	475
Collector-emitter saturation voltage	VCE(sat)	IC=-10mA, IB=-0.5mA		-0.3	V
Collector-emitter saturation voltage	VCE(sat)	IC=-100mA, IB=-5mA		-0.65	V
Base-emitter saturation voltage	VBE(sat)	IC=-10mA, IB=-0.5mA		-0.7	V
Base-emitter saturation voltage	VBE(sat)	IC=-100mA, IB=-5mA		-0.95	V
Base-emitter voltage	VBE(on)	VCE=-5V, IC=-2mA	-0.6	-0.75	V
Base-emitter voltage	VBE(on)	VCE=-5V, IC=-10mA	-0.82		V
Collector output capacitance	Cob	VCB=-10V, IE=0, f=1MHz		4.5	pF
Transition frequency	fT	VCE=-5V, IC=-10mA, f=100MHz		100	MHz
Noise figure	NF	VCE=-5V, Ic=-0.2mA, f=1kHz, Rg=2K, f=200Hz		10	dB
Maximum Ratings for TR2
Collector-Base Voltage	VCBO			-50	V
Collector-Emitter Voltage	VCEO			-45	V
Emitter-Base Voltage	VEBO			-5	V
Collector Current Continuous	IC			-0.1	A
Collector Power Dissipation	PC*			200	mW
Junction Temperature	TJ			150
Storage Temperature	Tstg		-55	150