High Collector Current NPN Darlington Transistors CBI MMBTA28 Suitable for Electronic Circuit Design
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Product Description
Product Overview
This document details NPN Darlington Transistors, manufactured by Heyuan China Base Electronics Technology Co., Ltd. These transistors are designed for high current gain applications. Key features include a high collector current rating and a wide operating temperature range. They are suitable for various electronic applications requiring efficient current amplification.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Product Type: NPN Darlington Transistors
- Marking Code: 3SS
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| MAXIMUM RATINGS (Ta=25 unless otherwise noted) | ||||||
| Collector-Base Voltage | VCBO | 80 | V | |||
| Collector-Emitter Voltage | VCEO | 80 | V | |||
| Emitter-Base Voltage | VEBO | 12 | V | |||
| Collector Current | IC | 500 | mA | |||
| Collector Power Dissipation | PC | 200 | mW | |||
| Thermal Resistance From Junction To Ambient | RJA | 625 | /W | |||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | +150 | |||
| ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) | ||||||
| Collector-base breakdown voltage | V(BR)CBO | IC=100A, IE=0 | 80 | V | ||
| Collector-emitter sustain voltage | VCEO(sus) | IC=100A, VBE=0 | 80 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=10A, IC=0 | 12 | V | ||
| Collector cut-off current | ICBO | VCB=60V, IE=0 | 0.1 | A | ||
| Collector cut-off current | ICES | VCE=60V, VBE=0 | 0.5 | A | ||
| Emitter cut-off current | IEBO | VEB=10V, IC=0 | 0.1 | A | ||
| DC current gain | hFE(1) * | VCE=5V, IC=10mA | 10 K | |||
| DC current gain | hFE(2) * | VCE=5V, IC=100mA | 10 K | |||
| Collector-emitter saturation voltage | VCE(sat)1* | IC=10mA, IB=0.01mA | 1.2 | V | ||
| Collector-emitter saturation voltage | VCE(sat)2* | IC=100mA, IB=0.1mA | 1.5 | V | ||
| Base-emitter voltage | VBE* | VCE=5V, IC=100mA | 2 | V | ||
| Collector output capacitance | Cob | VCB=1V, IE=0, f=1MHz | 8 | pF | ||
| Transition frequency | fT | VCE=5V,IC=10mA, f=100MHz | 125 | MHz | ||
| *Pulse test: pulse width 300s, duty cycle 2.0%. | ||||||
| Package Type | Pin 1 | Pin 2 | Pin 3 |
|---|---|---|---|
| SOT23 | BASE | EMITTER | COLLECTOR |
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