P channel MOSFET Bruckewell MST26P05 designed for load switch and small power switching uses
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The MST26P05 is a high-performance P-channel MOSFET featuring advanced trench technology with extreme high cell density. It offers excellent RDS(ON) and low gate charge, making it ideal for various small power switching and load switch applications. This device meets RoHS and Green Product requirements and has undergone full function reliability approval. Its typical applications include notebooks, load switches, and hand-held instruments.
Product Attributes
- Brand: Bruckewell Technology Corporation
- Product Type: P-Channel MOSFET
- Model: MST26P05
- Certifications: RoHS Compliant, Green Device Available
- Package Type: SOT-26
- Packing: 3,000/Reel
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| VDS | Drain-Source Voltage | -30 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID | Continuous Drain Current1 (TA =25°C) | -4.3 | A | |||
| ID | Continuous Drain Current1 (TA =70°C) | -3.5 | A | |||
| IDM | Pulsed Drain Current2 (TA =25°C) | -16 | A | |||
| PD | Power Dissipation3 (TA =25°C) | 1.1 | W | |||
| TJ/TSTG | Operating Junction and Storage Temperature | -55 | +150 | °C | ||
| RθJA | Maximum Junction-to-Ambient1 | 110 | °C/W | |||
| VGS (th) | Gate Threshold Voltage | VDS =VGS, ID =-250µA | -1.0 | -2.5 | V | |
| BVDSS | Drain-Source Breakdown Voltage | VGS =0V, ID =-250µA | -30 | V | ||
| gfs | Forward Transconductance | VDS =-5V, ID =-3.0A | 11 | S | ||
| IGSS | Gate-Source Leakage Current | VDS =0V, VGS =±20V | ±100 | nA | ||
| IDSS | Drain-Source Leakage Current | VDS =-24V, VGS =0V, TJ =25°C VDS =-24V, VGS =0V, TJ =55°C | -1 -5 | µA | ||
| RDS (on) | Static Drain-Source On-Resistance2 | VGS =-10V, ID =-4.0A VGS =-4.5V, ID =-3.0A | 52 75 | mΩ | ||
| VSD | Diode Forward Voltage2 | IS =-1.6A, VGS =0V, TJ =25°C | -1.2 | V | ||
| IS | Continuous Source Current1,4 (Diode) | -4.3 | A | |||
| ISM | Pulsed Source Current2,4 (Diode) | VG =VD =0V, Force Current | -16 | A | ||
| Qg | Total Gate Charge2 | 6.4 | nC | |||
| Qgs | Gate-Source Charge | 2.3 | nC | |||
| Qgd | Gate-Drain Charge | VDS =-15V ID =-3.0A VGS =-4.5V | 1.9 | nC | ||
| td(on) | Turn-On Delay Time2 | 2.8 | ns | |||
| tr | Rise Time | 8.4 | ns | |||
| td(off) | Turn-Off Delay Time | 39 | ns | |||
| tf | Fall Time | VDS =-15V ID =-3.0A VGS =-10V RG =3.3Ω | 6 | ns | ||
| CISS | Input Capacitance | 583 | pF | |||
| COSS | Output Capacitance | 100 | pF | |||
| CRSS | Reverse Transfer Capacitance | VDS =-15V VGS =0V f =1.0MHz | 80 | pF |
Notes:
- 1. Surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
- 2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.
- 3. The power dissipation is limited by 150°C junction temperature.
- 4. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina