Electronic Component CBI BC856C PNP Silicon Transistor in SOT23 Package for Amplifier and Switching

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

This PNP Silicon Epitaxial Transistor is designed for switching and amplifier applications. Packaged in a SOT-23 plastic case, it offers reliable performance for various electronic circuits. Available in multiple models (BC856, BC857, BC858, BC859, BC860) with distinct characteristics, these transistors are suitable for general-purpose use.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.
Package Type: SOT-23 Plastic Package
Material: Silicon Epitaxial Transistor

Technical Specifications

Parameter	Symbol	BC856	BC857, BC860	BC858, BC859	Value	Unit
Absolute Maximum Ratings (Ta = 25 C)
Collector Base Voltage	-VCBO	80	50	30	V	V
Collector Emitter Voltage	-VCEO	65	45	30	V	V
Emitter Base Voltage	-VEBO	5				V
Collector Current	-IC	100				mA
Peak Collector Current	-ICM	200				mA
Power Dissipation	Ptot	200				mW
Junction Temperature	Tj	150				C
Storage Temperature Range	Tstg	-65 to +150				C
Characteristics at Ta = 25 C
DC Current Gain (at -VCE = 5 V, -IC = 2 mA)	hFE (Group A)	110	220	-	-	-
DC Current Gain (at -VCE = 5 V, -IC = 2 mA)	hFE (Group B)	200	450	-	-	-
DC Current Gain (at -VCE = 5 V, -IC = 2 mA)	hFE (Group C)	420	800	-	-	-
Collector Base Cutoff Current (at -VCB = 30 V)	-ICBO	-				15	nA
Collector Base Breakdown Voltage (at -IC = 10 A)	-V(BR)CBO	80	50	30	-	V
Collector Emitter Breakdown Voltage (at -IC = 10 A)	-V(BR)CES	80	50	30	-	V
Collector Emitter Breakdown Voltage (at -IC = 10 mA)	-V(BR)CEO	65	45	30	-	V
Emitter Base Breakdown Voltage (at -IE = 1 A)	-V(BR)EBO	5				-	V
Collector Emitter Saturation Voltage (at -IC = 10 mA, -IB = 0.5 mA)	-VCE(sat)	-				0.3	V
Collector Emitter Saturation Voltage (at -IC = 100 mA, -IB = 5 mA)	-VCE(sat)	-				0.65	V
Base Emitter On Voltage (at -IC = 2 mA, -VCE = 5 V)	-VBE(on)	0.6				-	V
Base Emitter On Voltage (at -IC = 10 mA, -VCE = 5 V)	-VBE(on)	-				0.75 to 0.82	V
Current Gain Bandwidth Product (at -VCE = 5 V, -IC = 10 mA, f = 100 MHz)	fT	100				-	MHz
Output Capacitance (at -VCB = 10 V, f = 1 MHz)	Cob	-				6	pF
Noise Figure (at -IC = 200 A, -VCE = 5 V, RG = 2 K, f = 1 KHz)	NF	10	4	4	-	dB
Noise Figure (at -IC = 200 A, -VCE = 5 V, RG = 2 K, f = 30 ~15 KHz)	NF	-	-	2	-	dB

MARKING CODE	TYPE	MARKING
1	856A	3A
	856B	3B
	856C	3C
	857A	3E
	857B	3F
	857C	3G
	858A	3J
	858B	3K
	858C	3L
	859A	4A
	859B	4B
	859C	4C
	860A	4E
	860B	4F
	860C	4G

PACKAGE OUTLINE (SOT-23)
Symbol	Dimension in Millimeters (Min)	Dimension in Millimeters (Max)
A	0.90	1.10
A1	0.013	0.100
B	1.80	2.00
bp	0.35	0.50
C	0.09	0.150
D	2.80	3.00
E	1.20	1.40
HE	2.20	2.80
Lp	0.20	0.50
	0	5