High Breakdown Voltage NPN Transistor CBI MMBTA42 in SOT23 Plastic Package with Low Saturation Voltage

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Product Description

Product Overview

The MMBTA42 is an NPN transistor in a SOT-23 plastic-encapsulated package. It features a high breakdown voltage and low collector-emitter saturation voltage. This transistor is complementary to the MMBTA92 (PNP) and is suitable for various applications requiring these characteristics.

Product Attributes

Package Type: SOT-23 Plastic-Encapsulated
Transistor Type: NPN
Marking Code: 1D
Complementary To: MMBTA92 (PNP)

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Max	Unit
Collector-Base Breakdown Voltage	V(BR)CBO	IC= 100A, IE=0		300	V
Collector-Emitter Breakdown Voltage	V(BR)CEO	IC= 1mA, IB=0		300	V
Emitter-Base Breakdown Voltage	V(BR)EBO	IE= 100A, IC=0		5	V
Collector Cut-off Current	ICBO	VCB=200V, IE=0		0.25	A
Emitter Cut-off Current	IEBO	VEB= 5V, IC=0		0.1	A
DC Current Gain	hFE(1)	VCE= 10V, IC= 1mA	60
DC Current Gain	hFE(2)	VCE= 10V, IC=10mA	100	200
DC Current Gain	hFE(3)	VCE=10V, IC=30mA	60
Collector-Emitter Saturation Voltage	VCE(sat)	IC=20mA, IB= 2mA		0.2	V
Base-Emitter Saturation Voltage	VBE(sat)	IC= 20mA, IB=2mA		0.9	V
Transition Frequency	fT	VCE= 20V, IC= 10mA, f=30MHz		50	MHz

Parameter	Symbol	Value	Unit
Collector-Base Voltage	VCBO	300	V
Collector-Emitter Voltage	VCEO	300	V
Emitter-Base Voltage	VEBO	5	V
Collector Current - Continuous	IC	0.3	A
Collector Power Dissipation	PC	0.35	W
Thermal Resistance, Junction to Ambient	RJA	357	/W
Junction Temperature	TJ	150
Storage Temperature	Tstg	-55~+150
Collector Current-Peak	ICM	0.5	A