Stable NPN Transistor CBI C945W Featuring Low Noise and Precise hFE Linearity for Electronic Designs

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Product Description

Product Overview

This NPN transistor, complementary to the A733W, offers excellent hFE linearity and low noise characteristics. It is designed for various applications requiring reliable performance.

Product Attributes

Marking: CR
Origin: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Units
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Collector-Base Voltage	VCBO				60	V
Collector-Emitter Voltage	VCEO				50	V
Emitter-Base Voltage	VEBO				5	V
Collector Current - Continuous	IC				150	mA
Collector Power Dissipation	PC				200	mW
Junction Temperature	TJ				150
Storage Temperature	Tstg		-55		150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Collector-base breakdown voltage	V(BR)CBO	IC=100uA, IE=0	60			V
Collector-emitter breakdown voltage	V(BR)CEO	IC=1mA , IB=0	50			V
Emitter-base breakdown voltage	V(BR)EBO	IE=0.1mA, IC=0	5			V
Collector cut-off current	ICBO	VCB=60V, IE=0			0.1	A
Collector cut-off current	ICER	VCE=55V, R=10M			0.1	A
Emitter cut-off current	IEBO	VEB=5V, IC=0			0.1	A
DC current gain	hFE(1)	VCE=6V, IC=1mA	200		400
DC current gain	hFE(2)	VCE=6V, IC=0.1mA	40
Collector-emitter saturation voltage	VCE(sat)	IC=100mA, IB=10mA			0.3	V
Base-emitter saturation voltage	VBE(sat)	IC=100mA, IB=10mA			1	V
Transition frequency	fT	VCE=6V,IC=10mA,f =30 MHz		150		MHz
Collector output capacitance	Cob	VCB=10V, IE=0, f=1MHZ			3.0	pF
Noise figure	NF	VCE=6V, IC=0.1mA Rg=10k, f=1kMHZ		4	10	dB