NPN Silicon Epitaxial Planar Transistor with High Static Forward Current Transfer Ratio CBI FMMT491
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
This NPN Silicon Epitaxial Planar Transistor is designed for various electronic applications. It offers a Collector-Emitter Voltage (VCEO) of up to 60V and a Continuous Collector Current (IC) of 1A, with a Peak Pulse Current (ICM) of 2A. The device features a high Static Forward Current Transfer Ratio (hFE) and is suitable for operation within a wide temperature range of -55 to +150. It also exhibits robust ESD protection, withstanding up to 4,000V on the Human Body Model.
Product Attributes
- Type: NPN Silicon Epitaxial Planar Transistor
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25) | ||||
| Collector-Base Voltage | VCBO | 80 | V | |
| Collector-Emitter Voltage | VCEO | 60 | V | |
| Emitter-Base Voltage | VEBO | 7 | V | |
| Continuous Collector Current | IC | 1 | A | |
| Peak Pulse Current | ICM | 2 | A | |
| Base Current | IB | 200 | mA | |
| Thermal Characteristics (Ta = 25) | ||||
| Power Dissipation (Note 5) | PD | 500 | mW | |
| Thermal Resistance, Junction to Ambient (Note 5) | RJA | 250 | C / W | |
| Thermal Resistance, Junction to Lead (Note 6) | RJL | 197 | C / W | |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | ||
| ESD Ratings | ||||
| Electrostatic Discharge - Human Body Model | ESD HBM | 4,000 | V | JEDEC Class 3A |
| Electrostatic Discharge - Machine Model | ESD MM | 400 | V | |
| Characteristics at Ta= 25 | ||||
| Collector-Base Breakdown Voltage | BVCBO | 80 | V | IC = 100A |
| Collector-Emitter Breakdown Voltage (Note 8) | BVCEO | 60 | V | IC = 10mA |
| Emitter-Base Breakdown Voltage | BVEBO | 7 (Typ 8.1) | V | IE = 100A |
| Collector Cutoff Current | ICBO | <1 to 100 | nA | VCB = 60V |
| Emitter Cutoff Current | IEBO | <1 to 100 | nA | VEB = 5.6V |
| Collector Emitter Cutoff Current | ICES | <1 to 100 | nA | VCE = 60V, VCES = 60V |
| Static Forward Current Transfer Ratio (Note 8) | hFE | 100 (Typ 140) | IC = 1mA, VCE = 5V | |
| 100 to 300 | IC = 500mA, VCE = 5V | |||
| 80 to 120 | IC = 1A, VCE = 5V | |||
| 30 to 40 | IC = 2A, VCE = 5V | |||
| Collector-Emitter Saturation Voltage (Note 8) | VCE(sat) | 100 to 150 | mV | IC = 500mA, IB = 50mA |
| 160 to 250 | mV | IC = 1A, IB = 100mA | ||
| Base-Emitter Turn-On Voltage (Note 8) | VBE(on) | 830 to 1000 | mV | IC = 1A, VCE = 5V |
| Base-Emitter Saturation Voltage (Note 8) | VBE(sat) | 965 to 1100 | mV | IC = 1A, IB = 100mA |
| Output Capacitance | Cobo | to 10 | pF | VCB = 10V, f = 1MHz |
| Transition Frequency | fT | 150 | MHz | VCE = 10V, IC = 50mA, f = 100MHz |
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina