PNP Plastic Encapsulated Transistor CBI BC860CW Suitable for Switching and AF Amplifier Applications

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Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

These PNP plastic-encapsulated transistors are ideally suited for automatic insertion and are designed for switching and AF amplifier applications. They offer reliable performance in various electronic circuits.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.
Product Type: Transistor (PNP)
Encapsulation: Plastic
Package: SOT-323

Technical Specifications

Parameter	Symbol	Model	Value	Unit
Collector Base Voltage	-VCBO	BC856W	80	V
		BC857W, BC860W	50	V
		BC858W, BC859W	30	V
Collector Emitter Voltage	-VCEO	BC856W	65	V
		BC857W, BC860W	45	V
		BC858W, BC859W	30	V
Emitter Base Voltage	-VEBO	All	5	V
Collector Current	-IC	All	100	mA
Peak Collector Current	-ICM	All	200	mA
Power Dissipation	Ptot	All	150	mW
Junction Temperature	Tj	All	150	C
Storage Temperature Range	Tstg	All	-65 to +150	C
Collector Base Cutoff Current	-ICBO	All	-	15 nA
		(at -VCB = 30 V)
		Collector Base Breakdown Voltage	-V(BR)CBO	BC856W	80	V
		BC857W, BC860W	50	V
		BC858W, BC859W	30	V
Collector Emitter Breakdown Voltage	-V(BR)CES	BC856W	80	V
		BC857W, BC860W	50	V
		BC858W, BC859W	30	V
Collector Emitter Breakdown Voltage	-V(BR)CEO	BC856W	65	V
		BC857W, BC860W	45	V
		BC858W, BC859W	30	V
Emitter Base Breakdown Voltage	-V(BR)EBO	All	5	V
Collector Emitter Saturation Voltage	-VCE(sat)	at -IC = 10 mA, -IB = 0.5 mA	-	0.3 V
Collector Emitter Saturation Voltage	-VCE(sat)	at -IC = 100 mA, -IB = 5 mA	-	0.65 V
Base Emitter On Voltage	-VBE(on)	at -IC = 2 mA, -VCE = 5 V	-	0.75 V
Base Emitter On Voltage	-VBE(on)	at -IC = 10 mA, -VCE = 5 V	-	0.82 V
Current Gain Bandwidth Product	fT	at -VCE = 5 V, -IC = 10 mA, f = 100 MHz	100	MHz
Output Capacitance	Cob	at -VCB = 10 V, f = 1 MHz	-	6 pF
DC Current Gain	hFE	Group A	110 - 200	-
		Group B	200 - 450	-
		Group C	420 - 800	-