Integrated bias resistor digital transistor CBI DTC143TCA for simplified and inverter circuit design
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Product Description
Product Overview
This NPN digital transistor features built-in bias resistors, simplifying inverter circuit configurations by eliminating the need for external input resistors. The integrated thin-film resistors offer complete isolation for negative input biasing and minimize parasitic effects. Operation is streamlined, requiring only the setting of on/off conditions, which facilitates easier device design. It is suitable for applications where simplified circuit design and reliable digital switching are required.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Type: Digital Transistor (NPN)
Technical Specifications
| Parameter | Symbol | Conditions | Limit (DTC143TCA) | Unit |
|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 50 | V | |
| Collector-Emitter Voltage | VCEO | 50 | V | |
| Emitter-Base Voltage | VEBO | 5 | V | |
| Collector Current | IC | 100 | mA | |
| Power Dissipation | PD | (Ta=25) | 200 | mW |
| Junction Temperature | Tj | 150 | ||
| Storage Temperature | Tstg | -55+150 | ||
| Collector-base breakdown voltage | V(BR)CBO | Ic=50A,IE=0 | 50 | V |
| Collector-emitter breakdown voltage | V(BR)CEO | Ic=1mA,IB=0 | 50 | V |
| Emitter-base breakdown voltage | V(BR)EBO | IE=50A,IC=0 | 5 | V |
| Collector cut-off current | ICBO | VCB=50V,IE=0 | 0.5 | A |
| Emitter cut-off current | IEBO | VEB=4V,IC=0 | 0.5 | A |
| Collector-emitter saturation voltage | VCE(sat) | IC=5mA,IB=0.25mA | 0.3 | V |
| DC current gain | hFE | VCE=5V,IC=1mA | 100 - 600 | |
| Input resistor | R1 | 3.29 - 4.7 - 6.11 | k | |
| Transition frequency | fT | VCE=10V,IE=-5mA, f=100MHz | 250 | MHz |
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