Electronic Component CBI S9012W PNP Transistor Featuring Excellent hFE Linearity and SOT323 Package

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Product Description

Product Overview

The S9012W is a PNP transistor designed with excellent hFE linearity, making it a complementary component to the S9013T. This transistor is suitable for various electronic applications requiring reliable performance.

Product Attributes

Device Type: Transistor (PNP)
Package: SOT-323
Marking: 2T1

Technical Specifications

Symbol	Parameter	Test Conditions	MIN	TYP	MAX	Units
MAXIMUM RATINGS (TA=25 unless otherwise noted)
VCBO	Collector-Base Voltage				-40	V
VCEO	Collector-Emitter Voltage				-25	V
VEBO	Emitter-Base Voltage				-5	V
IC	Collector Current - Continuous				-500	mA
PC	Collector Power Dissipation				300	mW
Tj	Junction Temperature				150
Tstg	Storage Temperature		-55		150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
V(BR)CBO	Collector-base breakdown voltage	IC= -100A, IE=0	-40			V
V(BR)CEO	Collector-emitter breakdown voltage	IC= -1mA, IB=0	-25			V
V(BR)EBO	Emitter-base breakdown voltage	IE=-100A, IC=0	-5			V
ICBO	Collector cut-off current	VCB=-40V, IE=0			-0.1	A
ICEO	Collector cut-off current	VCE=-20V, IB=0			-0.1	A
IEBO	Emitter cut-off current	VEB= -5V, IC=0			-0.1	A
hFE	DC current gain	VCE=-1V, IC= -50mA	120		400
VCE(sat)	Collector-emitter saturation voltage	IC=-500mA, IB= -50mA			-0.6	V
VBE(sat)	Base-emitter saturation voltage	IC=-500mA, IB= -50mA			-1.2	V
fT	Transition frequency	VCE=-6V, IC= -20mA, f=30MHz		150		MHz
Cob	Collector output capacitance	VCB=-10V, IE=0, f=1MHz			5	pF