Plastic encapsulated transistor model CBI 2SD1005 offering high breakdown voltage and consistent gain

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Product Description

Product Overview

This NPN plastic-encapsulated transistor features a small flat package, high breakdown voltage, and excellent DC current gain linearity. It is suitable for applications requiring reliable performance and consistent gain characteristics.

Product Attributes

Brand: Not explicitly mentioned, but associated with Heyuan China Base Electronics Technology Co., Ltd.
Origin: China

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	IC=0.1mA,IE=0			100	V
Collector-emitter breakdown voltage	V(BR)CEO	IC=1mA,IB=0			80	V
Emitter-base breakdown voltage	V(BR)EBO	IE=0.1mA,IC=0			5	V
Collector cut-off current	ICBO	VCB=100V,IE=0			0.1	A
Emitter cut-off current	IEBO	VEB=5V,IC=0			0.1	A
DC current gain (hFE(1))	hFE(1)	VCE=2V, IC=100mA	90		400
DC current gain (hFE(2))	hFE(2)	VCE=2V, IC=500mA		25
Collector-emitter saturation voltage	VCE(sat)	IC=500mA,IB=50mA			0.5	V
Base-emitter saturation voltage	VBE(sat)	IC=500mA,IB=50mA			1.5	V
Base-emitter voltage	VBE	VCE=10V, IC=10mA	0.6	0.7		V
Transition frequency	fT	VCE=5V,IC=10mA			160	MHz
Collector output capacitance	Cob	VCB=10V, IE=0, f=1MHz			12	pF

Parameter	Symbol	Value	Unit
Collector-Base Voltage	VCBO	100	V
Collector-Emitter Voltage	VCEO	80	V
Emitter-Base Voltage	VEBO	5	V
Collector Current	IC	1	A
Collector Power Dissipation	PC	500	mW
Thermal Resistance Junction To Ambient	RJA	250	/W
Junction Temperature	Tj	150
Storage Temperature	Tstg	-55~+150