NPN transistor CBI MMBT5551 for medium power switching and amplification applications in SOT23 package

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Product Description

Product Overview

The MMBT5551 is an NPN transistor designed for medium power amplification and switching applications. It serves as a complementary component to the MMBT5401 transistor.

Product Attributes

Marking: G1
Package: SOT-23 (Plastic surface mounted package; 3 leads)

Technical Specifications

Parameter	Symbol	Test conditions	MIN	TYP	MAX	Units
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Collector-Base Voltage	VCBO				180	V
Collector-Emitter Voltage	VCEO				160	V
Emitter-Base Voltage	VEBO				6	V
Collector Current -Continuous	IC				0.6	A
Collector Power Dissipation	PC				300	mW
Junction Temperature	Tj				150
Storage Temperature	Tstg		-55		150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Collector-base breakdown voltage	V(BR)CBO	IC=100A, IE=0	180			V
Collector-emitter breakdown voltage	V(BR)CEO*	IC=1mA, IB=0	160			V
Emitter-base breakdown voltage	V(BR)EBO	IE=10A, IC=0	6			V
Collector cut-off current	ICBO	VCB=120V, IE=0			50	nA
Emitter cut-off current	IEBO	VEB=4V, IC=0			50	nA
DC current gain	hFE1*	VCE=5V, IC=1mA	80
	hFE2*	VCE=5V, IC =10mA		100	300
	hFE3*	VCE=5V, IC=50mA	50
Collector-emitter saturation voltage	VCEsat*	IC=10mA, IB=1mA		0.15		V
Collector-emitter saturation voltage		IC=50mA, IB=5mA		0.2		V
Base-emitter saturation voltage	VBEsat*	IC=10mA, IB=1mA		1		V
Base-emitter saturation voltage		IC=50mA, IB=5mA		1		V
Transition frequency	fT	VCE=10V, IC=10mA, f=100MHz		100	300	MHz
Collector output capacitance	Cob	VCB=10V, IE=0, f=1MHz			6	pF
Input capacitance	Cib	VBE=0.5V, IC=0, f=1MHz			20	pF
Noise figure	NF	VCE=5V, Ic=0.25mA, f=10Hz to 15.7KHz, Rs=1k			8	dB