Compact SOT363 package dual NPN transistor CBI MMDT4401DW ideal for electronic circuit amplification

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Product Description

Product Overview

This NPN epitaxial planar die construction transistor is ideal for low power amplification and switching applications. It is a dual transistor package featuring two NPN transistors in a single SOT-363 package, designed for efficient performance in various electronic circuits.

Product Attributes

Construction: Epitaxial Planar Die
Package Type: SOT-363
Transistor Type: NPN + NPN (Dual Transistor)
Encapsulation: Plastic
Origin: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

Parameter	Symbol	Conditions	Value	Units
Maximum Ratings (Ta = 25 unless otherwise specified)
Collector-Base Voltage	VCBO		60	V
Collector-Emitter Voltage	VCEO		40	V
Emitter-Base Voltage	VEBO		6	V
Collector Current -Continuous	IC		0.6	A
Collector Power Dissipation	PC		0.2	W
Thermal Resistance from Junction to Ambient	RJA		625	/W
Junction Temperature	TJ		150
Storage Temperature	Tstg		-55 to +150
Electrical Characteristics (Ta=25 unless otherwise specified)
Collector-base breakdown voltage	V(BR)CBO	IC= 100 A, IE=0	60	V
Collector-emitter breakdown voltage	V(BR)CEO	IC=1mA, IB=0	40	V
Emitter-base breakdown voltage	V(BR)EBO	IE= 100 A, IC=0	6	V
Collector cut-off current	ICBO	VCB= 50 V , IE=0	0.1	A
Collector cut-off current	ICEO	VCE= 35 V , IB=0	0.5	A
Emitter cut-off current	IEBO	VEB=5V , IC=0	0.1	A
DC current gain	hFE(1)	VCE=1V, IC= 0.1mA	20
DC current gain	hFE(2)	VCE=1V, IC= 1mA	40
DC current gain	hFE(3)	VCE=1V, IC= 10mA	80
DC current gain	hFE(4)	VCE=1V, IC= 150mA	100-300
DC current gain	hFE(5)	VCE=2V, IC= 500mA	40
Collector-emitter saturation voltage	VCE(sat)1	IC=150 mA, IB=15mA	0.4	V
Collector-emitter saturation voltage	VCE(sat)2	IC=500 mA, IB=50mA	0.75	V
Base-emitter saturation voltage	VBE(sat)1	IC=150 mA, IB=15mA	0.75-0.95	V
Base-emitter saturation voltage	VBE(sat)2	IC=500 mA, IB=50mA	1.2	V
Transition frequency	fT	VCE=10V,IC=20mA,f=100MHz	250	MHz
Output capacitance	Cob	VCB=5V, IE=0,f=1MHz	6.5	pF
Delay time	td		15	nS
Rise time	tr	VCC=30V, VBE=2V,IC=150mA ,IB1=15mA	20	nS
Storage time	tS		225	nS
Fall time	tf	VCC=30V, IC=150mA,IB1=-IB2=15mA	30	nS