Plastic packaged CBI BC847B transistor ideal for switching and AF amplifier electronic applications

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Product Description

Product Overview

This NPN transistor is ideally suited for automatic insertion, making it a versatile component for switching and AF amplifier applications. Designed for reliability and efficiency, it offers robust performance characteristics.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.
Package Type: SOT-23
Material: Plastic surface mounted package

Technical Specifications

Parameter	Symbol	Test Conditions	BC846	BC847	BC848	Units
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Collector-Base Voltage	VCBO		80	50	30	V
Collector-Emitter Voltage	VCEO		65	45	30	V
Emitter-Base Voltage	VEBO		6			V
Collector Current Continuous	IC		0.1			A
Collector Power Dissipation	PC*		200			mW
Junction Temperature	TJ		150
Storage Temperature	Tstg		-65-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Collector-base breakdown voltage	VCBO	IC= 10A, IE=0	80	50	30	V
Collector-emitter breakdown voltage	VCEO	IC= 10mA, IB=0	65	45	30	V
Emitter-base breakdown voltage	VEBO	IE= 10A, IC=0	6			V
Collector cut-off current	ICBO	VCB=70 V , IE=0	0.1			A
		VCB=50 V , IE=0		0.1		A
		VCB=30 V , IE=0			0.1	A
Collector cut-off current	ICEO	VCE=60 V , IB=0	0.1			A
		VCE=45 V , IB=0		0.1		A
		VCE=30 V , IB=0			0.1	A
Emitter cut-off current	IEBO	VEB=5 V , IC=0	0.1			A
DC current gain	hFE	VCE= 5V, IC= 2mA	110-200	220-450	420-800
Collector-emitter saturation voltage	VCE(sat)	IC=100mA, IB= 5mA	0.5			V
Base-emitter saturation voltage	VBE(sat)	IC=100mA, IB= 5mA	1.1			V
Transition frequency	fT	VCE= 5 V, IC= 10mA, f=100MHz	100			MHz
Collector output capacitance	Cob	VCB=10V, f=1MHz	4.5			pF