NPN Silicon Epitaxial Transistor CBI BC846AT for Switching and Amplifier Applications in Electronics

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

NPN Silicon Epitaxial Transistors designed for switching and amplifier applications. These transistors are suitable for a range of applications requiring reliable performance in both switching and amplification tasks.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.
Type: NPN Silicon Epitaxial Transistor

Technical Specifications

Parameter	Symbol	BC846T	BC847T, BC850T	BC848T, BC849T	Unit	Value
Collector Base Voltage	VCBO	80	50	30	V
Collector Emitter Voltage	VCEO	65	45	30	V
Emitter Base Voltage	VEBO	6	5	5	V
Collector Current	IC				mA	100
Peak Collector Current	ICM				mA	200
Power Dissipation	Ptot				mW	150
Junction Temperature	Tj				OC	150
Storage Temperature Range	Tstg				OC	-65 to +150

Characteristics at Ta = 25 OC	Symbol	Min.	Typ.	Max.	Unit
DC Current Gain at VCE = 5 V, IC =2 mA (Group A)	hFE	110	200	420
DC Current Gain at VCE = 5 V, IC =2 mA (Group B)	hFE	220	450	800
DC Current Gain at VCE = 5 V, IC =2 mA (Group C)	hFE
Collector Base Cutoff Current at VCB = 30 V	ICBO	-	-	15	nA
Collector Emitter Saturation Voltage at IC = 10 mA, IB = 0.5 mA	VCE(sat)	-	-	250	mV
Collector Emitter Saturation Voltage at IC = 100 mA, IB = 5 mA	VCE(sat)	-	-	600	mV
Base Emitter On Voltage at VCE = 5 V, IC = 2 mA	VBE(on)	-	-	700	mV
Base Emitter On Voltage at VCE = 5 V, IC = 10 mA	VBE(on)	-	-	720	mV
Transition Frequency at VCE = 5 V, IC = 10 mA, f = 100 MHz	fT	-	300	-	MHz
Output Capacitance at VCB = 10 V, f = 1 MHz	Cob	-	-	6	pF