SOT-89 Package NPN Silicon Epitaxial Planar Transistor CBI 2SC2881U for Power Amplification Circuits

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Product Description

Product Overview

This is an NPN Silicon Epitaxial Planar Transistor designed for power amplification. It offers specific electrical characteristics and is housed in a SOT-89 package. The transistor is suitable for applications requiring precise current gain and voltage ratings.

Product Attributes

Type: NPN Silicon Epitaxial Planar Transistor
Package: SOT-89
Origin: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

Parameter	Symbol	Value	Unit	Notes
Absolute Maximum Ratings (Ta = 25 °C)
Collector Base Voltage	VCBO	120	V
Collector Emitter Voltage	VCEO	120	V
Emitter Base Voltage	VEBO	5	V
Collector Current	IC	800	mA
Base Current	IB	160	mA
Collector Power Dissipation	PC	0.5	W	1) Mounted on ceramic board (250 mm² X 0.8 mm).
Junction Temperature	Tj	150	°C
Storage Temperature Range	Tstg	-55 to +150	°C
Characteristics (at Ta = 25 °C)
DC Current Gain at VCE = 5 V, IC =100 mA (Group O)	hFE	80 - 160	-
DC Current Gain at VCE = 5 V, IC =100 mA (Group Y)	hFE	120 - 240	-
Collector Base Cutoff Current at VCB = 120 V	ICBO	-	100	nA
Emitter Base Cutoff Current at VEB = 5 V	IEBO	-	100	nA
Collector Emitter Breakdown Voltage at IC = 1 mA	V(BR)CEO	120	V
Emitter Base Breakdown Voltage at IE = 1 mA	V(BR)EBO	5	V
Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA	VCE(sat)	-	1	V
Base Emitter on Voltage at VCE = 5 V, IC = 500 mA	VBE(on)	-	1	V
Transition Frequency at VCE = 5 V, IC = 100 mA	fT	-	120	MHz
Collector Output Capacitance at VCB = 10 V, f = 1 MHz	Cob	-	30	pF