Electronic switching transistor CBI BC857AW NPN silicon epitaxial planar for general purpose circuits

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Product Description

Product Overview

This NPN Silicon Epitaxial Planar Transistor is designed for general purpose and switching applications. It offers various models with distinct voltage and current ratings, suitable for a wide range of electronic circuits. The transistors are manufactured by Heyuan China Base Electronics Technology Co., Ltd.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.
Type: NPN Silicon Epitaxial Planar Transistor

Technical Specifications

Parameter	Symbol	BC846W	BC847W	BC848W	BC849W	BC850W	Unit
Absolute Maximum Ratings (Ta = 25 C)
Collector Base Voltage	VCBO	80	50	30	30	50	V
Collector Emitter Voltage	VCEO	65	45	30	30	45	V
Emitter Base Voltage	VEBO	6	6	5	5	5	V
Collector Current	IC	100					mA
Peak Collector Current	ICM	200					mA
Total Power Dissipation	Ptot	200					mW
Junction Temperature	Tj	150					C
Storage Temperature Range	Tstg	-55 to +150					C
Characteristics at Ta = 25 C
DC Current Gain	hFE	110 - 220	200 - 450	420 - 800	-	-	-
		(at VCE = 5 V, IC = 2 mA)	BC846AW~BC850AW	BC846BW~BC850BW	BC846CW~BC850CW

Collector Base Voltage	VCBO	80	50	30	30	50	V
(at IC = 10 A)
Collector Emitter Voltage	VCEO	65	45	30	30	45	V
(at IC = 10 mA)
Emitter Base Voltage	VEBO	6	6	5	5	5	V
(at IE = 1 A)
Collector Base Cutoff Current	ICBO	-15					nA
(at VCB = 30 V)
Emitter Base Cutoff Current	IEBO	-100					nA
(at VEB = 5 V)
Collector Emitter Saturation Voltage	VCE(sat)	-0.25					V
Collector Emitter Saturation Voltage	VCE(sat)	(at IC = 10 mA, IB = 0.5 mA)
		-0.6					V
(at IC = 100 mA, IB = 5 mA)
Base Emitter Voltage	VBE	-0.7					V
Base Emitter Voltage	VBE	(at VCE = 5 V, IC = 2 mA)
		-0.77					V
(at VCE = 5 V, IC = 10 mA)
Transition Frequency	fT	100					MHz
(at VCE = 5 V, IC = 10 mA, f = 100 MHz)
Collector Output Capacitance	Cob	-4.5					pF
(at VCB = 10 V, IE = 0, f = 1 MHz)