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Medium Power Amplification and Switching Dual Transistor CBI MMDT5551DW NPN NPN Epitaxial Planar Die

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

This is a DUAL TRANSISTOR (NPN+NPN) with Epitaxial Planar Die Construction. A complementary PNP type (MMDT5401) is available. It is ideal for medium power amplification and switching applications.

Product Attributes

  • Brand: CJ-ELE
  • Model: MMDT5551DW
  • Construction: Epitaxial Planar Die
  • Type: Dual Transistor (NPN+NPN)
  • Complementary PNP Type Available: MMDT5401

Technical Specifications

Parameter Symbol Condition Min Max Unit
Collector-Base Voltage V(BR)CBO IC=100A, IE=0 180 V
Collector-Emitter Voltage V(BR)CEO IC=1mA, IB=0 160 V
Emitter-Base Voltage V(BR)EBO IE=10mA, IC=0 6 V
Collector Cut-off Current ICBO VCB=120V, IE=0 0.05 A
Emitter Cut-off Current IEBO VEB=4V, IC=0 0.05 A
DC Current Gain hFE(1) VCE=5V, IC=1mA 80
DC Current Gain hFE(2) VCE=5V, IC=10mA 100 300
DC Current Gain hFE(3) VCE=5V, IC=50mA 30
Collector-Emitter Saturation Voltage VCE(sat)1 IC=10mA, IB=1mA 0.15 V
Collector-Emitter Saturation Voltage VCE(sat)2 IC=50mA, IB=5mA 0.2 V
Base-Emitter Saturation Voltage VBE(sat)1 IC=10mA, IB=1mA 1 V
Base-Emitter Saturation Voltage VBE(sat)2 IC=50mA, IB=5mA 1 V
Transition Frequency fT VCE=10V, IC=10mA, f=100MHz 100 300 MHz
Output Capacitance Cob VCB=10V, IE=0, f=1MHz 6 pF
Noise Figure NF VCE=5V, IC=0.2mA, RS=1K, f=1kHz 8 dB
Collector-Base Voltage (Max) 180 V
Collector-Emitter Voltage (Max) 160 V
Emitter-Base Voltage (Max) 6 V
Collector Current - Continuous (Max) IC 0.2 A
Collector Power Dissipation (Max) PC Tamb=25C 0.2 W
Junction Temperature (Max) Tj 150 C
Storage Temperature Tstg -55 150 C

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Have questions about our products or want to discuss a custom order? Our team is ready to help you.

Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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