PNP Silicon Epitaxial Planar Transistor CBI MPSA94U for in High Voltage Electronic Amplifier Circuits

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Product Description

Product Overview

This PNP Silicon Epitaxial Planar Transistor is designed for high voltage switching and amplifier applications. It offers robust performance with a high collector-emitter voltage rating and is suitable for various electronic circuits requiring reliable amplification and switching capabilities.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.
Package Type: SOT-89

Technical Specifications

Parameter	Symbol	Value	Unit	Conditions
Absolute Maximum Ratings (Ta = 25 C)
Collector Base Voltage	-VCBO	400	V
Collector Emitter Voltage	-VCEO	400	V
Emitter Base Voltage	-VEBO	6	V
Collector Current	-IC	300	mA
Total Power Dissipation	Ptot	625	mW
Junction Temperature	TJ	150	C
Storage Temperature Range	Tstg	-55 to +150	C
Characteristics (Ta = 25 C)
DC Current Gain	hFE	70	-	-VCE = 10 V, -IC = 1 mA
DC Current Gain	hFE	80	-	-VCE = 10 V, -IC = 10 mA
DC Current Gain	hFE	70	-	-VCE = 10 V, -IC = 50 mA
DC Current Gain	hFE	60	-	-VCE = 10 V, -IC = 100 mA
Collector Base Cutoff Current	-ICBO	-	0.1 A	-VCB = 300 V
Collector Emitter Cutoff Current	-ICES	-	1 A	-VCE = 400 V
Emitter Base Cutoff Current	-IEBO	-	0.1 A	-VEB = 4 V
Collector Base Breakdown Voltage	-V(BR)CBO	400	V	-IC = 100 A
Collector Emitter Breakdown Voltage	-V(BR)CEO	400	V	-IC = 1 mA
Emitter Base Breakdown Voltage	-V(BR)EBO	6	V	-IE = 10 A
Collector Emitter Saturation Voltage	-VCE(sat)	-	0.2 V	-IC = 10 mA, -IB = 1 mA
Collector Emitter Saturation Voltage	-VCE(sat)	-	0.5 V	-IC = 50 mA, -IB = 5 mA
Base Emitter Saturation Voltage	-VBE(sat)	-	0.75 V	-IC = 10 mA, -IB = 1 mA
Collector Output Capacitance	Cob	-	7 pF	-VCB = 20 V, f = 1 MHz