Plastic Encapsulated Dual PNP Transistor CBI BC857BV with Epitaxial Die Construction SOT563 Package

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Price: Negotiable

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Product Description

Product Overview

The BC857BV is a plastic-encapsulated dual PNP transistor featuring epitaxial die construction and an ultra-small surface mount package. Complementary NPN types are available. This transistor is designed for various electronic applications requiring reliable PNP amplification and switching.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.
Product Type: Dual Transistor (PNP+PNP)
Package Type: SOT-563
Marking Code: K5V

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Units
Maximum Ratings (Ta=25 unless otherwise noted)
Collector-Base Voltage	VCBO				-50	V
Collector-Emitter Voltage	VCEO				-45	V
Emitter-Base Voltage	VEBO				-5	V
Collector Current - Continuous	IC				-0.1	A
Collector Power Dissipation	PC				0.15	W
Thermal Resistance from Junction to Ambient	RJA				833	/W
Operation Junction and Storage Temperature Range	TJ,Tstg		-55		+150
Electrical Characteristics (Ta=25 unless otherwise specified)
Collector-base breakdown voltage	V(BR)CBO	IC=-10A,IE=0	-50			V
Collector-emitter breakdown voltage	V(BR)CEO	IC=-10mA,IB=0	-45			V
Emitter-base breakdown voltage	V(BR)EBO	IE=-1A,IC=0	-5			V
Collector cut-off current	ICBO	VCB=-30V,IE=0			-15	nA
DC current gain	hFE	VCE=-5V,IC=-2mA	220		475
Collector-emitter saturation voltage	VCE(sat)(1)	IC=-10mA,IB=-0.5mA			-0.1	V
Collector-emitter saturation voltage	VCE(sat)(2)	IC=-100mA,IB=-5mA			-0.4	V
Base-emitter saturation voltage	VBE(sat)(1)	IC=-10mA,IB=-0.5mA			-0.7	V
Base-emitter saturation voltage	VBE(sat)(2)	IC=-100mA,IB=-5mA			-0.9	V
Base-emitter voltage	VBE(1)	VCE=-5V,IC=-2mA		-0.75		V
Base-emitter voltage	VBE(2)	VCE=-5V,IC=-10mA		-0.82		V
Transition frequency	fT	VCE=-5V,IC=-10mA,f=100MHz		100		MHz
Collector output capacitance	Cob	VCB=-10V,IE=0,f=1MHz			4.5	pF
Noise figure	NF	VCE=-5V,Ic=-0.2mA, f=1kHZ,Rs=2K,BW=200Hz			10	dB