General Purpose NPN Silicon Transistor CBI BC847CW for Electronic Switching and Circuit Applications

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Product Description

Product Overview

This NPN Silicon Epitaxial Planar Transistor is designed for general purpose and switching applications. It offers a range of models with varying voltage and current ratings, making it suitable for diverse electronic circuits.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.
Type: NPN Silicon Epitaxial Planar Transistor

Technical Specifications

Parameter	Symbol	BC846W	BC847W	BC848W	BC849W	BC850W	Unit
Absolute Maximum Ratings (Ta = 25 °C)
Collector Base Voltage	VCBO	80	50	30	30	50	V
Collector Emitter Voltage	VCEO	65	45	30	30	45	V
Emitter Base Voltage	VEBO	6	6	5	5	5	V
Collector Current	IC	100					mA
Peak Collector Current	ICM	200					mA
Total Power Dissipation	Ptot	200					mW
Junction Temperature	Tj	150					°C
Storage Temperature Range	Tstg	- 55 to + 150					°C
Characteristics at Ta = 25 °C
DC Current Gain at VCE = 5 V, IC = 2 mA	hFE	110 - 220	200 - 450	420 - 800	-	-	-
	hFE	-	-	-	-	-	-
	hFE	-	-	-	-	-	-
Collector Base Voltage at IC = 10 µA	VCBO	80	50	30	30	50	V
Collector Emitter Voltage at IC = 10 mA	VCEO	65	45	30	30	45	V
Emitter Base Voltage at IE = 1 µA	VEBO	6	6	5	5	5	V
Collector Base Cutoff Current at VCB = 30 V	ICBO	- 15					nA
Emitter Base Cutoff Current at VEB = 5 V	IEBO	- 100					nA
Collector Emitter Saturation Voltage at IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA	VCE(sat)	0.25					V
	VCE(sat)	0.6					V
Base Emitter Voltage at VCE = 5 V, IC = 2 mA VCE = 5 V, IC = 10 mA	VBE	0.58 - 0.7					V
	VBE	0.7 - 0.77					V
Transition Frequency at VCE = 5 V, IC = 10 mA, f = 100 MHz	fT	100					MHz
Collector Output Capacitance at VCB = 10 V, IE = 0, f = 1 MHz	Cob	- 4.5					pF