General Purpose NPN Transistor CBI SS8050 with SOT89 Package and 0.5 Watt Collector Power Dissipation
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Product Description
Product Overview
The SS8050 is a plastic-encapsulated NPN transistor designed for general-purpose applications. It serves as a compliment to the SS8550 transistor. Key features include a continuous collector current of 1.5 A and a collector power dissipation of 0.5 W. This transistor is suitable for various electronic circuits requiring amplification and switching functionalities.
Product Attributes
- Type: NPN Transistor
- Package: SOT-89
- Marking: Y1
- Complementary Device: SS8550
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings (Ta=25 unless otherwise noted) | ||||||
| Collector-Base Voltage | VCBO | 40 | V | |||
| Collector-Emitter Voltage | VCEO | 25 | V | |||
| Emitter-Base Voltage | VEBO | 5 | V | |||
| Collector Current - Continuous | IC | 1.5 | A | |||
| Collector Power Dissipation | PC | 0.5 | W | |||
| Thermal Resistance (Junction to Ambient) | RJA | 250 | /W | |||
| Storage Temperature | TJ / Tstg | -55 | 150 | |||
| Electrical Characteristics (Ta=25 unless otherwise specified) | ||||||
| Collector-base breakdown voltage | V(BR)CBO | IC=100uA, IE=0 | 40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=0.1mA, IB=0 | 25 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=100A, IC=0 | 5 | V | ||
| Collector cut-off current | ICBO | VCB=40V, IE=0 | 0.1 | A | ||
| Emitter cut-off current | ICEO | VCE=20V, IE=0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB=5V, IC=0 | 0.1 | A | ||
| DC current gain | hFE(1) | VCE=1V, IC=100mA | 120 | 400 | ||
| DC current gain | hFE(2) | VCE=1V, IC=800mA | 40 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC=800mA, IB=80mA | 0.5 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=800mA, IB=80mA | 1.2 | V | ||
| Base-emitter voltage | VBE | VCE=1V, IC=10mA | 1 | V | ||
| Base-emitter positive favor voltage | VBEF | IB=1A | 1.55 | V | ||
| Transition frequency | fT | VCE=10V,IC=50mA,f=30MHz | 100 | MHz | ||
| Output capacitance | Cob | VCB=10V,IE=0,f=1MHz | 15 | pF | ||
Classification of hFE(1)
| Rank | Range |
|---|---|
| C | 120-200 |
| D | 160-300 |
| D1 | 200-350 |
| D2 | 300-400 |
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