Epitaxial Planar Die Plastic Encapsulated Transistor CBI MMDT9014DW Medium Power Amplification Device

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Product Description

Product Overview

This plastic-encapsulated transistor features an epitaxial planar die construction and is ideal for medium power amplification and switching applications. A complementary PNP type, MMDT9015, is also available. The TGL6 is the marking for this transistor.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.
Type: Plastic-Encapsulated Transistor
Construction: Epitaxial Planar Die
Marking: TGL6
Complementary PNP Type: MMDT9015
Package: SOT-363

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
Collector-Base Voltage	VCBO				50	V
Collector-Emitter Voltage	VCEO				45	V
Emitter-Base Voltage	VEBO				5	V
Collector Current -Continuous	IC				0.1	A
Collector Power Dissipation	PC				0.2	W
Junction Temperature	TJ				150
Storage Temperature	Tstg		-55	~+150
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
Collector-base breakdown voltage	V(BR)CBO	IC=100A, IE=0	50			V
Collector-emitter breakdown voltage	V(BR)CEO	IC=100A, IB=0	45			V
Emitter-base breakdown voltage	V(BR)EBO	IE=100A, IC=0	5			V
Collector cut-off current	ICBO	VCB=50V, IE=0		0.1		A
Collector cut-off current	ICEO	VCE=35V, IB=0		1		A
Emitter cut-off current	IEBO	VEB=4V, IC=0		0.1		A
DC current gain	hFE	VCE=5V, IC=1mA	300	400
Collector-emitter saturation voltage	VCE(sat)	IC=100mA, IB=5mA		0.3		V
Base-emitter saturation voltage	VBE(sat)	IC=100mA, IB=5mA		1		V
Base-emitter voltage	VBE	VCE=5V,IC=2mA	0.58	0.7		V
Transition frequency	fT	VCE=5V,IC=10mA, f=30MHz		150		MHz
Collector output capacitance	Cob	VCB=10V, IE=0, f=1MHz		3.5		pF
Noise Figure	NF	VCE=5V, IC=0.2mA, Rg=2k,f=1kHz		10		dB