Surface Mount NPN Transistor CBI MMBT4401W in SOT323 Package Ideal for Various Electronic Applications

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Product Description

Product Overview

This NPN bipolar junction transistor (BJT) is designed for surface mount applications, offering a complementary function to the MMBT4403W. It is housed in a small SOT-323 package and is suitable for various electronic circuits requiring a compact and reliable NPN transistor.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.
Package Type: SOT-323
Transistor Type: NPN

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
Collector-Base Voltage	VCBO				60	V
Collector-Emitter Voltage	VCEO				40	V
Emitter-Base Voltage	VEBO				6	V
Collector Current	IC				600	mA
Collector Power Dissipation	PC				200	mW
Thermal Resistance Junction To Ambient	RJA				625	/W
Junction Temperature	Tj				150
Storage Temperature	Tstg		-55		+150
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
Collector-base breakdown voltage	V(BR)CBO	IC=100A, IE=0	60			V
Collector-emitter breakdown voltage	V(BR)CEO	IC=1mA, IB=0	40			V
Emitter-base breakdown voltage	V(BR)EBO	IE=100A, IC=0	6			V
Collector cut-off current	ICBO	VCB=35V, IE=0			100	nA
Collector cut-off current	ICEO	VCE=35V, IB=0			500	nA
DC current gain	hFE	VCE=1V, IC=100A	10	20	30
		VCE=1V, IC=1mA	40	100
		VCE=1V, IC=10mA		100
		VCE=1V, IC=150mA		300
		VCE=2V, IC=500mA		40
Collector-emitter saturation voltage	VCE(sat)	IC=150mA, IB=15mA		0.4		V
		IC=500mA, IB=50mA		0.75		V
		IC=150mA, IB=15mA		0.75	0.95	V
Base-emitter saturation voltage	VBE(sat)	IC=500mA, IB=50mA		1.2		V
Base-emitter saturation voltage	VBE(sat)	IC=150mA, IB=15mA		0.75	0.95	V
Transition frequency	fT	VCE=10V,IC=20mA , f=100MHz		250		MHz
Collector output capacitance	Cob	VCB=5V, IE=0, f=1MHz			6.5	pF