SOT363 Package Plastic Encapsulated Dual NPN Transistor CBI BC847DW Component for Electronics Design

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Price: Negotiable

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Product Description

Product Overview

This product is a dual transistor housed in a SOT-363 plastic-encapsulated package. It integrates two NPN transistors into a single component, offering advantages such as reduced component count and minimized board space. The design ensures no mutual interference between the internal transistors, making it suitable for various electronic applications.

Product Attributes

Package Type: SOT-363
Transistor Type: Dual Transistor (NPN+NPN)
Encapsulation: Plastic

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Units
Collector-Base Voltage	VCBO				50	V
Collector-Emitter Voltage	VCEO				45	V
Emitter-Base Voltage	VEBO				6	V
Collector Current Continuous	IC				0.1	A
Collector Dissipation	PC	(Ta=25)			200	mW
Junction Temperature	TJ				150
Storage Temperature	Tstg		-55		150
Collector-base breakdown voltage	V(BR)CBO	IC=10A,IE=0	50			V
Collector-emitter breakdown voltage	V(BR)CEO	IC=10mA,IB=0	45			V
Emitter-base breakdown voltage	V(BR)EBO	IE=10A,IC=0	6			V
Collector cut-off current	ICBO	VCB=30V,IE=0			15	nA
Emitter cut-off current	IEBO	IC=0, VEB=5V			5	A
DC current gain	hFE	VCE=5V,IC=2mA	110	200	450
Collector-emitter saturation voltage	VCE(sat)(1)	IC=10mA,IB=0.5mA		0.1		V
Collector-emitter saturation voltage	VCE(sat)(2)	IC=100mA,IB=5mA		0.3		V
Base-emitter saturation voltage	VBE(sat)	IC=10mA,IB=0.5mA		0.77		V
Transition frequency	fT	VCB=5V,IE=10mA,f=100MHz			100	MHz
Collector output capacitance	Cob	VCB=10V,IE=0,f=1MHz			1.5	pF