Low Voltage High Current Plastic Encapsulated Transistor CBI BCX56-16U SOT-89 Package for Electronics

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Product Description

Product Overview

The BCX54, BCX55, and BCX56 series are NPN transistors designed for low voltage and high current applications. They serve as ideal driver stages for audio amplifiers. These transistors are PNP complements to the BCX51, BCX52, and BCX53 series.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.
Product Type: Plastic-Encapsulated Transistors
Package: SOT-89

Technical Specifications

Model	Parameter	Test Conditions	Min	Typ	Max	Unit
BCX54	Collector-Base Voltage (VCBO)				45	V
			BCX55	60
					BCX56	100
BCX54	Collector-Emitter Voltage (VCEO)							45	V
			BCX55	60
					BCX56	80
Emitter-Base Voltage (VEBO): 5 V
Collector Current (IC): 1 A
Collector Power Dissipation (PC): 500 mW
Thermal Resistance Junction To Ambient (RJA): 250 /W
Junction Temperature (Tj): 150
Storage Temperature (Tstg): -55~+150
BCX54	Collector-base breakdown voltage (V(BR)CBO)	IC=100A, IE=0						45	V
		BCX55	60
				BCX56	100
BCX54	Collector-emitter breakdown voltage (V(BR)CEO)					IC=10mA, IB=0		45	V
		BCX55	60
				BCX56	80
Emitter-base breakdown voltage (V(BR)EBO) (IE=100A, IC=0): 5 V
Collector cut-off current (ICBO) (VCB=30V, IE=0): 0.1 A
Emitter cut-off current (IEBO) (VEB=5V, IC=0): 0.1 A
BCX54	DC current gain (hFE)					VCE=2V, IC=5mA	40
All Models	DC current gain (hFE)	VCE=2V, IC=150mA	63				250
		VCE=2V, IC=0.5A	25
		Collector-emitter saturation voltage (VCE(sat))	IC=0.5A, IB=50mA		0.5		V
Base -emitter voltage (VBE) (VCE=2V, IC=0.5A): 1 V
Transition frequency (fT) (VCE=5V, IC=10mA, f=100MHz): 130 MHz