High Current NPN Silicon Power Transistor CBI 2SD882PU Designed for Amplification and Switching Uses

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Product Description

Product Overview

The 2SD882U is an NPN Silicon Power Transistor designed for various electronic applications. It is categorized into four groups (R, Q, P, E) based on its DC current gain (hFE). This transistor offers robust performance with high current handling capabilities and defined saturation voltages, making it suitable for power switching and amplification circuits.

Product Attributes

Type: NPN Silicon Power Transistor
Current Gain Groups: R, Q, P, E
Package Outline: SOT-89

Technical Specifications

Parameter	Symbol	Value	Unit	Conditions
Absolute Maximum Ratings
Collector to Base Voltage	VCBO	40	V
Collector to Emitter Voltage	VCEO	30	V
Emitter to Base Voltage	VEBO	5	V
Collector Current	IC	3	A
Peak Collector Current (t = 10 ms)	ICP	7	A
Total power dissipation (Ta = 25 OC)	Ptot	1	W	(Ta = 25 OC)
Total power dissipation (Tc = 25 OC)	Ptot	10	W	(Tc = 25 OC)
Junction Temperature	Tj	150	OC
Storage Temperature Range	Tstg	-55 to +150	OC
Characteristics at Ta = 25 OC
DC Current Gain (Group R)	hFE	30	-	VCE = 2 V, IC = 20 mA
DC Current Gain (Group Q)	hFE	60	-	VCE = 2 V, IC = 20 mA
DC Current Gain (Group P)	hFE	100	-	VCE = 2 V, IC = 20 mA
DC Current Gain (Group E)	hFE	160	-	VCE = 2 V, IC = 20 mA
DC Current Gain (Group R)	hFE	-	120	VCE = 2 V, IC = 1 A
DC Current Gain (Group Q)	hFE	-	200	VCE = 2 V, IC = 1 A
DC Current Gain (Group P)	hFE	-	320	VCE = 2 V, IC = 1 A
DC Current Gain (Group E)	hFE	-	400	VCE = 2 V, IC = 1 A
Collector Base Cutoff Current	ICBO	-	1	A	VCB = 30 V
Emitter Base Cutoff Current	IEBO	-	1	A	VEB = 3 V
Collector Emitter Saturation Voltage	VCE(sat)	-	0.5	V	IC = 2 A, IB = 0.2 A
Base Emitter Saturation Voltage	VBE(sat)	-	2	V	IC = 2 A, IB = 0.2 A
Gain Bandwidth Product	fT	-	90	MHz	VCE = 5 V, IC = 0.1 A
Output Capacitance	Cob	-	45	pF	VCB = 10 V, f = 1 MHz