NPN transistor CBI C1815 featuring SOT23 package ideal for switching and amplification applications

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Product Description

Product Overview

The C1815 is an NPN bipolar junction transistor designed for general-purpose applications. It features a power dissipation capability and is marked with 'HF'. This transistor is suitable for various electronic circuits requiring amplification or switching functions.

Product Attributes

Type: NPN Transistor
Marking: HF
Package: SOT-23 (Plastic surface mounted package; 3 leads)

Technical Specifications

Parameter	Symbol	Test Conditions	Value	Units
Maximum Ratings (TA=25 unless otherwise noted)
Collector-Base Voltage	VCBO		60	V
Collector-Emitter Voltage	VCEO		50	V
Emitter-Base Voltage	VEBO		5	V
Collector Current - Continuous	IC		150	mA
Collector Power Dissipation	PC		200	mW
Junction Temperature	Tj		150
Storage Temperature	Tstg		-55-150
Electrical Characteristics (Tamb=25 unless otherwise specified)
Collector-base breakdown voltage	V(BR)CBO	IC= 100A, IE=0	60	V
Collector-emitter breakdown voltage	V(BR)CEO	IC= 0.1mA, IB=0	50	V
Collector cut-off current	ICBO	VCB=60V, IE=0	0.1	A
Collector cut-off current	ICEO	VCE=50V, IB=0	0.1	A
Emitter cut-off current	IEBO	VEB= 5V, IC=0	0.1	A
DC current gain	hFE	VCE=6V, IC=2mA	200 - 400
Collector-emitter saturation voltage	VCE(sat)	IC=100mA, IB=10mA	0.25	V
Base-emitter saturation voltage	VBE(sat)	IC=100mA, IB=10mA	1	V
Transition frequency	fT	VCE=10V, IC=1mA, f=30MHz	80	MHz