Electronic NPN Transistor CBI 2SD1623SU with Low Saturation Voltage and High Collector Current Rating

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Product Description

Product Overview

The 2SD1623 is a high-performance NPN transistor designed for various electronic applications. It features a low collector-to-emitter saturation voltage, large current capacity with a wide Area of Safe Operation (ASO), and fast switching speeds. This transistor is complementary to the 2SB1123 PNP transistors, making it suitable for a wide range of circuit designs.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.
Type: NPN Transistor
Package: SOT-89

Technical Specifications

Absolute Maximum Ratings (Ta = 25)

Parameter	Symbol	Rating	Unit
Collector - Base Voltage	VCBO	60	V
Collector - Emitter Voltage	VCEO	50	V
Emitter - Base Voltage	VEBO	6	V
Collector Current - Continuous	IC	2	A
Collector Current - Pulse	ICP	4	A
Collector Power Dissipation (Note.1)	PC	0.5 (Note.1) 1.3	W
Junction Temperature	TJ	150
Storage Temperature Range	Tstg	-55 to 150

Note.1: Mounted on ceramic board (250mm 0.8mm)

Electrical Characteristics (Ta = 5)

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	VCBO	Ic= 100 uAIE= 0	60			V
Collector-emitter breakdown voltage	VCEO	Ic= 1 mARBE=	50			V
Emitter -base breakdown voltage	VEBO	IE= 100 uAIC= 0	6			V
Collector-base cut-off current	ICBO	VCB= 50 V , IE= 0			0.1	uA
Emitter cut-off current	IEBO	VEB= 4V , IC=0			0.1	uA
Collector-emitter saturation voltage	VCE(sat)	IC=1 A, IB=50 mA	0.15	0.4		V
Base - emitter saturation voltage	VBE(sat)	IC=1 A, IB=50 mA	0.9	1.2		V
DC current gain	hFE	VCE= 2V, IC= 100 mA	100	560
		VCE= 2V, IC= 1.5 A	40
Turn-ON Time	ton				60	ns
Storage Time	tstg				550	ns
Fall Time	tf				30	ns
Collector output capacitance	Cob	VCB= 10V, IE= 0,f=1MHz		12		pF
Transition frequency	fT	VCE= 10V, IC= 50mA	150			MHz