Epitaxial planar die transistor CBI MMDT3904V KAP suitable for amplification and switching circuits

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Product Description

Product Overview

This component features an epitaxial planar die construction, making it ideal for low power amplification and switching applications. It offers reliable performance with defined voltage and current ratings, suitable for various electronic circuits.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.
Construction: Epitaxial planar die

Technical Specifications

Parameter	Conditions	Value	Unit
Collector-Base Voltage (V(BR)CBO)	IC=10 A, IE=0	60	V
Collector-Emitter Voltage (V(BR)CEO)	IC=1mA, IB=0	40	V
Emitter-Base Voltage (V(BR)EBO)	IE=10 A, IC=0	5	V
Collector Current - Continuous (IC)	-	0.2	A
Collector Power Dissipation (PC)	-	0.2	W
Junction and Storage Temperature Range (TJ)	-	-55 to +150	C
Collector Cut-off Current (ICBO)	VCB=30V, IE=0	0.05	A
Emitter Cut-off Current (IEBO)	VEB=5V, IC=0	0.05	A
DC Current Gain (hFE)	VCE=1V, IC=0.1mA	40	-
DC Current Gain (hFE)	VCE=1V, IC=1mA	70	-
DC Current Gain (hFE)	VCE=1V, IC=10mA	100-300	-
DC Current Gain (hFE)	VCE=1V, IC=50mA	60	-
DC Current Gain (hFE)	VCE=1V, IC=100mA	30	-
Collector-Emitter Saturation Voltage (VCE(sat)1)	IC=10mA, IB=1mA	0.2	V
Collector-Emitter Saturation Voltage (VCE(sat)2)	IC=50mA, IB=5mA	0.3	V
Base-Emitter Saturation Voltage (VBE(sat)1)	IC=10mA, IB=1mA	0.65-0.85	V
Base-Emitter Saturation Voltage (VBE(sat)2)	IC=50mA, IB=5mA	0.95	V
Transition Frequency (fT)	VCE=20V, IC=10mA, f=100MHz	300	MHz
Output Capacitance (Cob)	VCB=5V, IE=0, f=1MHz	-	pF
Delay Time (td)	VCC=3V, VBE(off)=-0.5V, IC=10mA, IB1=-IB2=1mA	35	ns
Rise Time (tr)	VCC=3V, VBE(off)=-0.5V, IC=10mA, IB1=-IB2=1mA	35	ns
Storage Time (ts)	VCC=3V, IC=10mA, IB1=-IB2=1mA	200	ns
Fall Time (tf)	VCC=3V, IC=10mA, IB1=-IB2=1mA	50	ns
Collector Cut-off Current (IC)	VC=30V	0.05	A