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Schottky Barrier Diode Array with Fast Switching CBI BAS40DW-04 Plastic Encapsulated SOT 363 Package

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

This product is a plastic-encapsulated Schottky barrier diode array designed for applications requiring low forward voltage drop and fast switching speeds. It is suitable for general-purpose rectification and switching circuits.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Type: Plastic-Encapsulate Transistors SCHOTTKY BARRIER DIODE ARRAYS
  • Package: SOT-363

Technical Specifications

Parameter Symbol Test conditions MIN MAX Unit
Non-Repetitive Peak reverse voltage VRM 40 V
DC Blocking Voltage VR 40 V
Average Rectified Output Current IO 200 mA
Power Dissipation Pd 200 mW
Thermal Resistance. Junction to Ambient Air RJA 625 /W
Junction temperature TJ 125
Storage temperature range TSTG -65 125
Reverse breakdown voltage V(BR) IR= 10A 40 V
Reverse voltage leakage current IR VR=30V 200 nA
Forward voltage VF IF=1mA 380 mV
VF IF=40mA 1000 mV
Total capacitance CT VR=0,f=1MHz 5 pF
Reverse recovery time trr IF=10mA, IR=IF=1mA RL=100 5 nS

Package Outline Dimensions (SOT-363)

Symbol Dimension in Millimeters Min Max
A 0.90 1.00
A1 0.010 0.100
B 1.20 1.40
bp 0.25 0.45
C 0.09 0.15
D 2.00 2.20
E 1.15 1.35
HE 2.15 2.55
Lp 0.25 0.46
0 6

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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