SOT89 plastic encapsulated PNP transistor CBI SS8550 for general purpose amplification and switching

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Product Description

Product Overview

The SS8550 is a PNP bipolar transistor in a SOT-89 plastic-encapsulated package. It serves as a compliment to the SS8050 transistor and is marked with 'Y2'. This transistor is designed for general-purpose amplification and switching applications.

Product Attributes

Type: PNP Transistor
Package: SOT-89 Plastic-Encapsulate
Marking: Y2
Compliment to: SS8050

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Max	Unit
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
Collector-Base Voltage	VCBO			-40	V
Collector-Emitter Voltage	VCEO			-25	V
Emitter-Base Voltage	VEBO			-5	V
Collector Current - Continuous	IC			-1.5	A
Collector Power Dissipation	PC			0.5	W
Thermal Resistance From Junction To Ambient	RJA			250	/W
Junction Temperature	TJ			150
Storage Temperature	Tstg		-55	150
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
Collector-base breakdown voltage	V(BR)CBO	IC= -100A, IE=0	-40		V
Collector-emitter breakdown voltage	V(BR)CEO	IC= -0.1mA, IB=0	-25		V
Emitter-base breakdown voltage	V(BR)EBO	IE= -100A, IC=0	-5		V
Collector cut-off current	ICBO	VCB= -40 V,IE=0		-0.1	A
Collector cut-off current	ICEO	VCE= -20V, IB=0		-0.1	A
Emitter cut-off current	IEBO	VEB= -5V, IC=0		-0.1	A
DC current gain	hFE(1)	VCE= -1V, IC= -100mA	120	400
DC current gain	hFE(2)	VCE= -1V, IC= -800mA	40
Collector-emitter saturation voltage	VCE(sat)	IC=-800mA, IB= -80mA		-0.5	V
Base-emitter saturation voltage	VBE(sat)	IC=-800mA, IB= -80mA		-1.2	V
Base-emitter on voltage	VBE(on)	Ic=-1V,VCE=-10mA		-1	V
Base-emitter positive favor voltage	VBEF	IB=-1A		-1.55	V
Transition frequency	fT	VCE= -10V, IC= -50mA		100	MHz
Output capacitance	Cob	VCB=-10V,IE=0,f=1MHz		20	pF