Electronic Component CBI BC846A NPN Transistor Ideal for Switching and Amplifier Applications SOT23

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Product Description

Product Overview

This NPN transistor is ideally suited for automatic insertion, making it highly efficient for manufacturing processes. It is designed for switching and AF amplifier applications, offering reliable performance in a variety of electronic circuits. The device is available in the SOT-23 package, a common choice for surface-mounted components.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.
Package Type: SOT-23
Transistor Type: NPN

Technical Specifications

Parameter	Symbol	Test Conditions	BC846	BC847	BC848	Units
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Collector-Base Voltage	VCBO		80	50	30	V
Collector-Emitter Voltage	VCEO		65	45	30	V
Emitter-Base Voltage	VEBO		6			V
Collector Current Continuous	IC		0.1			A
Collector Power Dissipation	PC*		200			mW
Junction Temperature	TJ		150
Storage Temperature	Tstg		-65-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Collector-base breakdown voltage	VCBO	IC= 10A, IE=0	80	50	30	V
Collector-emitter breakdown voltage	VCEO	IC= 10mA, IB=0	65	45	30	V
Emitter-base breakdown voltage	VEBO	IE= 10A, IC=0	6			V
Collector cut-off current	ICBO	VCB=70 V , IE=0	0.1			A
		VCB=50 V , IE=0		0.1		A
		VCB=30 V , IE=0			0.1	A
Collector cut-off current	ICEO	VCE=60 V , IB=0	0.1			A
		VCE=45 V , IB=0		0.1		A
		VCE=30 V , IB=0			0.1	A
Emitter cut-off current	IEBO	VEB=5 V , IC=0	0.1			A
DC current gain	hFE	VCE= 5V, IC= 2mA	110-200	220-450	420-800
Collector-emitter saturation voltage	VCE(sat)	IC=100mA, IB= 5mA	0.5			V
Base-emitter saturation voltage	VBE(sat)	IC=100mA, IB= 5mA	1.1			V
Transition frequency	fT	VCE= 5 V, IC= 10mA, f=100MHz	100			MHz
Collector output capacitance	Cob	VCB=10V, f=1MHz	4.5			pF