Independent NPN NPN Silicon Epitaxial Planar Transistor CBI MMDT3052DW for Low Frequency Amplification

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Product Description

Product Overview

The MMDT3052DW is a Silicon Epitaxial Planar Transistor featuring independent NPN+NPN transistor elements. It is designed for low-frequency amplification applications.

Product Attributes

Type: NPN+NPN Silicon Epitaxial Planar Transistor
Marking: 5G

Technical Specifications

Parameter	Symbol	Value	Unit
Absolute Maximum Ratings (Ta = 25)
Collector Base Voltage	VCBO	50	V
Collector Emitter Voltage	VCEO	50	V
Emitter Base Voltage	VEBO	6	V
Collector Current	IC	200	mA
Power Dissipation	Ptot	150	mW
Junction Temperature	Tj	125
Storage Temperature Range	Tstg	-55 to +125
Electrical Characteristics (Ta = 25)
DC Current Gain at VCE = 6 V, IC = 0.1 mA	hFE	90	-
DC Current Gain at VCE = 6 V, IC = 1 mA	hFE	120	-
DC Current Gain at VCE = 6 V, IC = 1 mA	hFE	200	-
DC Current Gain at VCE = 6 V, IC = 1 mA	hFE	350	-
DC Current Gain at VCE = 6 V, IC = 1 mA	hFE	240	-
DC Current Gain at VCE = 6 V, IC = 1 mA	hFE	400	-
DC Current Gain at VCE = 6 V, IC = 1 mA	hFE	700	-
Collector Base Cutoff Current at VCB = 50 V	ICBO	100	nA
Emitter Base Cutoff Current at VEB = 6 V	IEBO	100	nA
Collector Emitter Breakdown Voltage at IC = 100 A	V(BR)CEO	50	V
Collector Emitter Saturation Voltage at IC = 100 mA, IB = 10 mA	VCE(sat)	0.3	V
Transition Frequency at VCE = 6 V, -IE = 10 mA	fT	200	MHz
Collector Output Capacitance at VCB = 6 V, f = 1 MHz	Cob	2.5	pF