NPN Silicon Epitaxial Planar Transistor CBI MMBT3904W Suitable for Switching Amplifier Applications

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Price: Negotiable

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Product Description

Product Overview

This NPN Silicon Epitaxial Planar Transistor is designed for switching and amplifier applications. It offers a range of DC current gain values across different collector currents and exhibits breakdown voltages suitable for general-purpose use. The device is available in a SOT-323 package, making it suitable for compact electronic designs.

Product Attributes

Type: NPN Silicon Epitaxial Planar Transistor
Marking Code: 1E
Origin: Heyuan China Base Electronics Technology Co., Ltd.
Package: SOT-323

Technical Specifications

Parameter	Symbol	Value	Unit	Conditions
Absolute Maximum Ratings
Collector Base Voltage	VCBO	60	V	Ta = 25 C
Collector Emitter Voltage	VCEO	40	V	Ta = 25 C
Emitter Base Voltage	VEBO	6	V	Ta = 25 C
Collector Current	IC	200	mA	Ta = 25 C
Total Power Dissipation	Ptot	200	mW	Ta = 25 C
Junction Temperature	Tj	150	C
Storage Temperature Range	Tstg	-55 to +150	C
Characteristics
DC Current Gain	hFE	40	-	VCE = 1 V, IC = 0.1 mA
DC Current Gain	hFE	70	-	VCE = 1 V, IC = 1 mA
DC Current Gain	hFE	100	-	VCE = 1 V, IC = 10 mA
DC Current Gain	hFE	60	-	VCE = 1 V, IC = 50 mA
DC Current Gain	hFE	30	-	VCE = 1 V, IC = 100 mA
Collector Emitter Cutoff Current	ICES	-50	nA	VCE = 30 V
Emitter Base Cutoff Current	IEBO	-50	nA	VEB = 3 V
Collector Base Breakdown Voltage	V(BR)CBO	60	V	IC = 10 A
Collector Emitter Breakdown Voltage	V(BR)CEO	40	V	IC = 1 mA
Emitter Base Breakdown Voltage	V(BR)EBO	6	V	IE = 10 A
Collector Emitter Saturation Voltage	VCE(sat)	0.2	V	IC = 10 mA, IB = 1 mA
Collector Emitter Saturation Voltage	VCE(sat)	0.3	V	IC = 50 mA, IB = 5 mA
Base Emitter Saturation Voltage	VBE(sat)	0.65	V	IC = 10 mA, IB = 1 mA
Base Emitter Saturation Voltage	VBE(sat)	0.85	V	IC = 50 mA, IB = 5 mA
Transition Frequency	fT	300	MHz	VCE = 20 V, -IE = 10 mA, f = 100 MHz
Collector Output Capacitance	Cob	-4	pF	VCB = 10 V, f = 100 KHz
Delay Time	td	-35	ns	VCC = 3 V, VBE(OFF) = 0.5 V, IC = 10 mA, IB1 = 1 mA
Rise Time	tr	-35	ns	VCC = 3 V, VBE(OFF) = 0.5 V, IC = 10 mA, IB1 = 1 mA
Storage Time	tstg	-200	ns	VCC = 3 V, IC = 10 mA, IB1 = -IB2 = 1 mA
Fall Time	tf	-50	ns	VCC = 3 V, IC = 10 mA, IB1 = -IB2 = 1 mA
SOT-323 Package Outline Dimensions (Millimeters)
Symbol	Dimension	Min	Max
A		0.90	1.00
A1		0.010	0.100
B		1.20	1.40
bp		0.25	0.45
C		0.09	0.15
D		2.00	2.20
E		1.15	1.35
HE		2.15	2.55
Lp		0.25	0.46
		0	6