Low saturation voltage NPN transistor CBI 2SA1213 designed for switching and amplifier applications

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Product Description

Product Overview

This NPN transistor is designed for high-speed switching applications and features a small flat package. It offers a low collector-emitter saturation voltage and is complementary to the 2SA1213. Ideal for use in power amplifier and switching circuits.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.
Package Type: SOT-89

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	IC=100A, IE=0			50	V
Collector-emitter breakdown voltage	V(BR)CEO	IC=1mA, IB=0			50	V
Emitter-base breakdown voltage	V(BR)EBO	IE=100A, IC=0			5	V
Collector cut-off current	ICBO	VCB=50V, IE=0		0.1		A
Emitter cut-off current	IEBO	VEB=5V, IC=0		0.1		A
DC current gain (1)	hFE(1)	VCE=2V, IC=0.5A	70		240
DC current gain (2)	hFE(2)	VCE=2V, IC=2A		20
Collector-emitter saturation voltage	VCE(sat)	IC=1A, IB=50mA		0.5		V
Base-emitter saturation voltage	VBE(sat)	IC=1A, IB=50mA		1.2		V
Transition frequency	fT	VCE=2V, IC=0.5A		120		MHz
Collector output capacitance	Cob	VCB=10V, IE=0, f=1MHz		30		pF

Maximum Ratings

Parameter	Symbol	Value	Unit
Collector-Base Voltage	VCBO	50	V
Collector-Emitter Voltage	VCEO	50	V
Emitter-Base Voltage	VEBO	5	V
Collector Current	IC	2	A
Collector Power Dissipation	PC	500	mW
Thermal Resistance Junction To Ambient	RJA	250	/W
Junction Temperature	Tj	150
Storage Temperature	Tstg	-55~+150