NPN Transistor CBI MMBT3904 SOT23 Package Epitaxial Planar Die Construction for Electronic Circuits

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Product Description

Product Overview

This NPN transistor, the MMBT3906, is an epitaxial planar die construction device designed for general-purpose applications. It offers complementary functionality to PNP transistors and is recommended for various electronic circuits. The transistor is housed in a compact SOT-23 plastic surface-mounted package with 3 leads.

Product Attributes

Complementary Type: PNP Transistor MMBT3906
Construction: Epitaxial Planar Die
Marking: 1AM
Package: SOT-23 (Plastic surface mounted package; 3 leads)
Origin: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Max	Unit
Collector-Base Voltage	VCBO	(Ta=25 unless otherwise noted)		60	V
Collector-Emitter Voltage	VCEO	(Ta=25 unless otherwise noted)		40	V
Emitter-Base Voltage	VEBO	(Ta=25 unless otherwise noted)		6	V
Collector Current	IC	(Ta=25 unless otherwise noted)		200	mA
Total Device Dissipation	PC	(Ta=25 unless otherwise noted)		200	mW
Thermal Resistance Junction to Ambient	RJA	(Ta=25 unless otherwise noted)		625	/W
Junction Temperature	TJ	(Ta=25 unless otherwise noted)		150
Storage Temperature	Tstg	(Ta=25 unless otherwise noted)	-55	+150
Collector-base breakdown voltage	V(BR)CBO	IC= 10A, IE=0	60		V
Collector-emitter breakdown voltage	V(BR)CEO	IC= 1mA, IB=0	40		V
Emitter-base breakdown voltage	V(BR)EBO	IE=10A, IC=0	6		V
Collector cut-off current	ICBO	VCB=60V, IE=0		0.1	A
Collector cut-off current	ICEX	VCE=30V, VBE(off)=3V		50	nA
Emitter cut-off current	IEBO	VEB=5V, IC=0		0.1	A
DC current gain	hFE(1)	VCE=1V, IC=10mA	100	300
DC current gain	hFE(2)	VCE=1V, IC= 50mA	60
DC current gain	hFE(3)	VCE=1V, IC= 100mA	30
Collector-emitter saturation voltage	VCE(sat)	IC=50mA, IB= 5mA		0.3	V
Base-emitter saturation voltage	VBE(sat)	IC= 50mA, IB= 5mA		0.95	V
Transition frequency	fT	VCE=20V, IC=10mA, f=100MHz		300	MHz
Delay Time	td	VCC=3V, VBE=-0.5V IC=10mA, IB1=-IB2=1.0mA		35	nS
Rise Time	tr	VCC=3V, VBE=-0.5V IC=10mA, IB1=-IB2=1.0mA		35	nS
Storage Time	ts	VCC=3V, IC=10mA, IB1=-IB2=1mA		200	nS
Fall Time	tf	VCC=3V, IC=10mA, IB1=-IB2=1mA		50	nS