Silicon Epitaxial Planar Switching Diode CBI BAS16W with Low Forward Voltage and Fast Recovery Time

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

This is a Silicon Epitaxial Planar Switching Diode designed for ultra-high-speed switching applications. It features a small package, low forward voltage, fast reverse recovery time, and small total capacitance, making it ideal for demanding electronic circuits requiring rapid switching performance.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.
Package Type: SOT-323 Plastic Package
Marking Code: A6

Technical Specifications

Parameter	Symbol	Value	Unit	Notes
Absolute Maximum Ratings (Ta = 25 °C)
Repetitive Peak Reverse Voltage	VRRM	85	V
Continuous Reverse Voltage	VR	75	V
Continuous Forward Current	IF	155	mA
Repetitive Peak Forward Current	IFRM	500	mA
Non-Repetitive Peak Forward Surge Current	IFSM	4.5 (t=1µs), 1 (t=1ms), 0.5 (t=1s)	A
Power Dissipation	Ptot	200	mW
Junction Temperature	Tj	150	°C
Storage Temperature Range	Tstg	-65 to +150	°C
Characteristics (at Ta = 25 °C)
Forward Voltage	VF	-	mV/V	715 mV (at IF = 1 mA), 855 mV (at IF = 10 mA), 1 V (at IF = 50 mA), 1.25 V (at IF = 150 mA)
Reverse Current	IR	-	nA/µA	30 nA (at VR = 25 V), 1 µA (at VR = 75 V), 30 µA (at VR = 25 V, TJ = 150 °C), 50 µA (at VR = 75 V, TJ = 150 °C)
Reverse Breakdown Voltage	V(BR)R	75	V	at IR = 100 µA
Diode Capacitance	Cd	-	pF	1.5 pF (at VR = 0, f = 1 MHz)
Reverse Recovery Time	trr	-	ns	4 ns (at IF = IR = 10 mA, RL = 50 Ω)