PNP Epitaxial Planar Transistor CBI MMBTSA1015 Designed for Switching and Audio Frequency Amplifier

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Product Description

Product Overview

This PNP Silicon Epitaxial Planar Transistor is designed for switching and AF amplifier applications. It is available in three DC current gain groups: O, Y, and G. The complementary NPN transistor MMBTSC1815 is recommended for NPN applications. The transistor is housed in a SOT-23 plastic package.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.
Package Type: SOT-23 Plastic Package

Technical Specifications

Parameter	Symbol	Value	Unit
Absolute Maximum Ratings (Ta = 25 °C)
Collector Base Voltage	-VCBO	50	V
Collector Emitter Voltage	-VCEO	50	V
Emitter Base Voltage	-VEBO	5	V
Collector Current	-IC	150	mA
Base Current	-IB	50	mA
Power Dissipation	Ptot	200	mW
Junction Temperature	Tj	150	°C
Storage Temperature Range	TS	-65 to +150	°C
Characteristics at Ta = 25 °C
DC Current Gain at -VCE = 6 V, -IC = 2 mA	hFE (Group O)	70 - 120	-
	hFE (Group Y)	120 - 200	-
	hFE (Group G)	200 - 400	-
DC Current Gain at -VCE = 6 V, -IC = 150 mA	hFE	25 - 140	-
Collector Base Cutoff Current at -VCB = 50 V	-ICBO	- 0.1	µA
Emitter Base Cutoff Current at -VEB = 5 V	-IEBO	- 0.1	µA
Collector Base Breakdown Voltage at -IC =100 µA	-V(BR)CBO	50	V
Collector Emitter Breakdown Voltage at -IC = 10 mA	-V(BR)CEO	50	V
Emitter Base Breakdown Voltage at -IE = 10 µA	-V(BR)EBO	5	V
Collector Emitter Saturation Voltage at -IC = 100 mA, -IB = 10 mA	-VCE(sat)	- 0.3	V
Base Emitter Saturation Voltage at -IC = 100 mA, -IB = 10 mA	-VBE(sat)	- 1.1	V
Gain Bandwidth Product at -VCE = 10 V, -IC = 1 mA	fT	80	MHz
Output Capacitance at -VCB = 10 V, f = 1 MHz	COB	- 7	pF