Transistor CBI BC846C NPN Silicon Epitaxial Type in Compact SOT23 Package for Switching Applications

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Product Description

Product Overview

This NPN Silicon Epitaxial Transistor is designed for switching and amplifier applications. For complementary types, the PNP transistors BC856...BC860 are recommended. The device is housed in a SOT-23 Plastic Package.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.
Package Type: SOT-23 Plastic Package
Transistor Type: NPN Silicon Epitaxial Transistor

Technical Specifications

Parameter	Symbol	BC846	BC847, BC850	BC848, BC849	Units
Absolute Maximum Ratings (Ta = 25 C)
Collector Base Voltage	VCBO	80	50	30	V
Collector Emitter Voltage	VCEO	65	45	30	V
Emitter Base Voltage	VEBO	6	6	5	V
Collector Current	IC	100				mA
Peak Collector Current	ICM	200				mA
Power Dissipation	Ptot	200				mW
Junction Temperature	TJ	150				C
Storage Temperature Range	TS	-65 to +150				C
Characteristics at Tamb = 25 C
DC Current Gain (VCE = 5 V, IC = 2 mA)	hFE	110 - 220	200 - 450	420 - 800	-
Collector Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)	VCEsat	250				mV
Collector Emitter Saturation Voltage (IC = 100 mA, IB = 5 mA)	VCEsat	600				mV
Base Emitter On Voltage (IC = 2 mA, VCE = 5 V)	VBE(on)	580 - 700				mV
Base Emitter On Voltage (IC = 10 mA, VCE = 5 V)	VBE(on)	720				mV
Collector Cutoff Current (VCB = 30 V)	ICBO	15				nA
Current Gain Bandwidth Product (VCE = 5 V, IC = 10 mA, f = 100 MHz)	fT	300				MHz
Output Capacitance (VCB = 10 V, f = 1 MHz)	Cob	6				pF
Input Capacitance (VEB = 0.5 V, f = 1 MHz)	Cib	9				pF
Noise Figure (IC = 200 A, VCE = 5 V, RG = 2 K, f = 1 KHz)	NF	BC846, BC847, BC848: 10 dB	-	-	-
Noise Figure (IC = 200 A, VCE = 5 V, RG = 2 K, f = 1 KHz)	NF	-	BC849, BC850: 4 dB	-	-
Noise Figure (IC = 200 A, VCE = 5 V, RG = 2 K, f = 30 ~15 KHz)	NF	-	-	BC849: 4 dB	-
Noise Figure (IC = 200 A, VCE = 5 V, RG = 2 K, f = 30 ~15 KHz)	NF	-	-	BC850: 3 dB	-