PNP Transistor SOT523 Package Featuring CBI S8550 Suitable for Electronic Circuit Applications

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Product Description

Product Overview

The S8550T is a PNP bipolar junction transistor (BJT) designed as a complementary component to the S8050T. It features a continuous collector current (IC) of 0.5A and is suitable for various electronic applications. The transistor is marked with '2TY' and is available in a SOT-523 package with clearly defined Base, Emitter, and Collector pins.

Product Attributes

Type: PNP Transistor
Marking: 2TY
Package: SOT-523
Complementary to: S8050T

Technical Specifications

Parameter	Symbol	Test Conditions	Value	Units
Maximum Ratings (TA=25 unless otherwise noted)
Collector-Base Voltage	VCBO		-40	V
Collector-Emitter Voltage	VCEO		-25	V
Emitter-Base Voltage	VEBO		-5	V
Collector Current - Continuous	IC		-0.5	A
Collector Power Dissipation	PC		0.2	W
Junction Temperature	Tj		150
Storage Temperature	Tstg		-55-150
Electrical Characteristics (Tamb=25 unless otherwise specified)
Collector-base breakdown voltage	V(BR)CBO	IC = -100A, IE=0	-40	V
Collector-emitter breakdown voltage	V(BR)CEO	IC =-1mA, IB=0	-25	V
Emitter-base breakdown voltage	V(BR)EBO	IE= -100A, IC=0	-5	V
Collector cut-off current	ICBO	VCB= -40V, IE=0	-0.1	A
Collector cut-off current	ICEO	VCE= -20V, IB=0	-0.1	A
Emitter cut-off current	IEBO	VEB= -3V, IC=0	-0.1	A
DC current gain (hFE(1))	hFE(1)	VCE= -1V, IC= -50mA	120 - 400
DC current gain (hFE(2))	hFE(2)	VCE= -1V, IC= -500mA	50
Collector-emitter saturation voltage	VCE(sat)	IC=-500mA, IB= -50mA	-0.6	V
Base-emitter saturation voltage	VBE(sat)	IC=-500mA, IB= -50mA	-1.2	V
Transition frequency	fT	VCE= -6V, IC= -20mA, f=30MHz	150	MHz